IXTH10N100D2 Discrete Semiconductor Products |
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Allicdata Part #: | IXTH10N100D2-ND |
Manufacturer Part#: |
IXTH10N100D2 |
Price: | $ 7.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 10A TO-247 |
More Detail: | N-Channel 1000V 10A (Tc) 695W (Tc) Through Hole TO... |
DataSheet: | IXTH10N100D2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 7.17066 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5320pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 695W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
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IXTH10N100D2 is a type of field-effect transistor (FET) which specifically falls within the single-FET family. This transistor is a vertical semiconductor device that is capable of controlling the electrical current of other circuits. It was first discovered in the 1960s and is an important component in many electronic applications across a variety of industries, from telecommunications and aerospace to consumer electronics and automotive.
Due to its vertical orientation, IXTH10N100D2 is able to perform its function within a compact area, making them ideal for compact electronic designs. The main design of IXTH10N100D2 are composed of an insulated gate, which is connected to a mobile drain and source, along with a gate lead and a substrate, which all help to control the electrical current.
When functioning properly, the electrical current is regulated by the introduction of voltage, or lack thereof, at the transistor gate. A higher voltage point on the gate would allow more of the source current to flow through the drain, while a lower voltage would reduce the amount of current flowing. This type of control makes IXTH10N100D2 ideal for controlling voltages and currents in a wide range of applications.
One of the most notable applications of IXTH10N100D2 are power supplies, as they are able to regulate current and voltage when linked with a switching circuit. In addition, IXTH10N100D2 can be found in a variety of other circuits and applications, such as amplifiers, phase-locked loops, control systems, and voltage regulators. It can also be used for speed control and thyristor control, depending on the circuit.
Since IXTH10N100D2 is conductive, it is an ideal component for protection from overvoltage, as it can be connected to a relay that will disconnect the circuit in case of an overvoltage.
IXTH10N100D2 has demonstrated excellent performance in various thermal and electrical parameter, with low on-state resistance, fast switching speed, and high dielectric strength. They are also very robust in terms of electro-magnetic interference (EMI) resistance, and are capable of supporting a wide range of voltage range and power ratings.
Overall, IXTH10N100D2 is a robust and reliable component that is suited for a variety of different applications. From controlling voltages and currents in power supply circuits and other control systems, to protection from overvoltage, IXTH10N100D2 offers a reliable level of performance, with low on-state resistance, fast switching speed, and EMI resistance.
The specific data is subject to PDF, and the above content is for reference
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