IXTH76P10T Allicdata Electronics
Allicdata Part #:

IXTH76P10T-ND

Manufacturer Part#:

IXTH76P10T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 100V 76A TO-247
More Detail: P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-...
DataSheet: IXTH76P10T datasheetIXTH76P10T Datasheet/PDF
Quantity: 1320
Stock 1320Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 298W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTH76P10T Application Field and Working Principle

The IXTH76P10T is a single N-Channel Enhancement Mode Field Effect Transistor (FET) that is designed to offer high levels of reliability. This device is suitable for applications that require switching, voltage control and current regulation, such as DRAMs, flat panel displays, and fan motor controllers. This device’s sophisticated internal design offers long-term reliability and consistency, enabling it to be used in a wide range of applications.

Features

The IXTH76P10T offers several advantages that make it suitable for a variety of applications. These advantages include low on-resistance, a wide operating voltage range, very low power consumption, high reliability and a high degree of flexibility in its application. Additionally, this device offers improved electrostatic discharge (ESD) protection, making it suitable for applications that require a high degree of protection against sudden voltage and current changes.

Working Principle

The IXTH76P10T is a MOSFET. A MOSFET is an electronic device that uses an insulated-gate field-effect transistor structure with an integrated gate driver and a control signal input. This device’s gate driver allows for control of the voltage and current between source and drain terminals, allowing for switching and voltage control. The gate driver is made up of a well-defined input threshold voltage and a high open-circuit voltage, which allow for a wide range of voltage and current regulation.

The IXTH76P10T is an enhancement-mode FET, meaning it requires an external voltage to turn on the device. This external voltage must be of high enough magnitude to overcome the threshold voltage of the device. Once the external voltage has been applied, the device will begin to conduct current between the source and drain terminals, allowing for voltage and current control. As the external voltage is reduced, the device will eventually turn off, thereby disabling the flow of current.

Applications

The IXTH76P10T FET is suitable for a range of applications, such as flat panel displays, DC-DC converters, power supply circuits, and motor controllers. Additionally, it can be used for voltage controlling and signal conditioning for signal processing and communication lines. Due to its low on-resistance, this device is also suitable for low-side switching applications, such as in automotive electronics.

This device is also used in a wide range of consumer electronics devices, such as digital cameras, camcorders, and video recorders. Additionally, due to its high reliability, it is suitable for longer-term applications, such as DRAMs. This device is also suitable for power management applications, such as smart phones and portable media players.

Conclusion

The IXTH76P10T is a single N-Channel Enhancement Mode FET that offers high levels of reliability and performance. This device is suitable for a wide range of applications, such as flat panel displays, power supplies, motor controllers, and signal conditioning. Additionally, it offers excellent ESD protection and its low on-resistance enables it to be used in low-side switching applications. This device can also be used in a wide range of consumer electronics devices, due to its high reliability and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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