IXTH220N075T

Series:	TrenchMV™
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	75V
Current - Continuous Drain (Id) @ 25°C:	220A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	165nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7700pF @ 25V
FET Feature:	--
Power Dissipation (Max):	480W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247 (IXTH)
Package / Case:	TO-247-3

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IXTH220N075T Application Field and Working Principle

IXTH220N075T are insulated gate bipolar transistors (IGBT) of the N-Channel type family. They are used for the applications in power switching such as power supply and motor control and the IGBT\'s excellent characteristics such as low on-state voltage and high current transfer ratio make it suitable for these applications.The working principle of IXTH220N075T is based on that of a MOSFET (metal-oxide semiconductor field effect transistor). It consists of two main components, the Insulated-Gate Bipolar Transistor (IGBT) and the Gate Driver Circuit (GDC). The IGBT switches the power flow by opening or closing the electrical gap between the source and drain. The Gate Driver Circuit (GDC) is responsible for driving the MOS gate and controlling the gate voltage, thus controlling the current flow in the IGBT.The structure of IXTH220N075T IGBT is composed of a p-type substrate, an n-type epi layer, a gate oxide layer and a metal gate. The p-type substrate acts as the collector, which carries the main current in the device. The n-type epi layer functions as the emitter, which injects the majority carriers (electrons) into the collector. The gate oxide layer separates the gate from the collector and the emitter. The metal gate controls the device by modulating the gate-to-source voltage (VGS).IXTH220N075T are capable of operating in environments where the temperatures are high up to 150°C. This makes them suitable for applications with high thermal demands. As compared to other IGBTs in the family, they have a higher breakdown voltage of 750V, allowing them to be used in harsh environment applications.The on-state voltage of IXTH220N075T is low (~2V), allowing high power efficiency as the majority of the energy consumed is switched efficiently. They also operate at high frequency (up to 50kHz) without sacrificing performance. Finally, the low switching losses due to their fast switching speed makes them suitable for applications with high frequency requirements.To sum up, IXTH220N075T IGBTs are used for switching power in various applications such as motor control, power supply, and high frequency applications. They are capable of operating at high temperatures and have a high breakdown voltage. They also have low on-state voltage, allowing for high efficiency as well as high frequency performance with low switching losses.

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