IXTH2R4N120P

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXTH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1207pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 10V
Series:	Polar™
Rds On (Max) @ Id, Vgs:	7.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.4A (Tc)
Drain to Source Voltage (Vdss):	1200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<h2>Introduction</h2>IXTH2R4N120P is a type of MOSFET (metal-oxide-semiconductor field-effect transistor), which is often used in applications that require a voltage-gain larger than that of a regular bipolar transistor. Its low on-resistance also makes it ideal for switching and linear applications. This article introduces the IXTH2R4N120P application field and working principle.<h2>Application Field</h2>The IXTH2R4N120P is most often used in applications that require a low on-resistance, such as those related to switching, or driving loads up to 500 Watts. Examples of such applications are DC motor control, heater control, heater fan control, and Buck, Buck-Boost converter control.The IXTH2R4N120P is also a great choice for increasing the voltage gain in circuits with a high input impedance. This is because the IXTH2R4N120P has a high input capacitance and can operate with low gate voltages. The IXTH2R4N120P also has a low reverse transfer capacitance, which makes it well suited for applications requiring slow switching, such as AC motor control.<h2>Working Principle </h2>The IXTH2R4N120P is a n-channel enhancement mode MOSFET with gate , source, and drain terminals. The IXTH2R4N120P is typically used in a circuit configuration where the drain is connected to the output of the load. When the gate is connected to a voltage source, the source voltage increases, resulting in an increase in the current between the source and the drain. Depending on the value of the gate voltage, the IXTH2R4N120P can be used either as an amplifier or a switch.In amplifier mode, the IXTH2R4N120P works by allowing a small amount of current to flow when the gate voltage is low. As the gate voltage increases, the current increases proportionally. The IXTH2R4N120P amplifies the input signal by a certain ratio, depending on the gate voltage.When used as a switch, the IXTH2R4N120P works by allowing a large amount of current to flow when the gate voltage is high and allowing a small amount of current to flow when the gate voltage is low. This allows the IXTH2R4N120P to be used to control the direction and amount of current in a circuit.<h2>Conclusion </h2>In conclusion, the IXTH2R4N120P is a MOSFET that is most commonly used for low on-resistance applications and for increasing the voltage gain in circuits with a high input impedance. It can operate at low gate voltages, making it suitable for applications such as AC motor control and heater fan control. It can also be used as either an amplifier or a switch, depending on the gate voltage.

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