Allicdata Part #: | IXTH360N055T2-ND |
Manufacturer Part#: |
IXTH360N055T2 |
Price: | $ 5.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 360A TO-247 |
More Detail: | N-Channel 55V 360A (Tc) 935W (Tc) Through Hole TO-... |
DataSheet: | IXTH360N055T2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 4.87158 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 (IXTH) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 935W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 20000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 360A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTH360N055T2 is an N-channel enhancement mode MOSFET with low input capacitance and fast switching characteristics. It is specially designed to be used in driver circuits meant for switching high current loads such as LED arrays and high power DC motors.
As a type of MOSFET, the IXTH360N055T2 is a field-effect transistor (FET) which is made of a semiconductor channel embedded within the gate insulators. The channel has an interface region on one side, known as the source and on the other, known as the drain. As the gate voltage (VGS) is increased or decreased, the resistance of the channel between the two terminals adjusts accordingly.
The IXTH360N055T2 is most useful for applications where fast switching times as well as minimum input capacitance are desired. It is used in a variety of applications, from power switching to LEDs or other low voltage or high voltage components, to motor control. Its low input capacitance also makes it particularly useful for switching high current loads such as LED arrays or DC motors.
Basic Principle of Operation:
At power on, a low gate voltage (VGS) causes the current to flow freely between the source and drain, as the channel is wide open. As the VGS increases, the resistance of the channel between the source and drain increases and the current begins to be restricted. Once the gate voltage reaches the threshold voltage (Vth), the transistor is said to be in the “on” state. Any decrease in the gate voltage below Vth causes the channel to close and the transistor is said to be in the “off” state. The process of switching from “on” to “off” is referred to as the “turn-off process”.
When the IXTH360N055T2 is in its “on” state, it can handle up to 22 A of continuous current. However, when switching to the “off” state, it can handle up to 18 A of current with a peak current of up to 70 A. This makes it ideal for switching large loads such as LED arrays or DC motors.
As far as power consumption is concerned, the IXTH360N055T2’s “on” state power consumption is relatively low and its “off” state power consumption is even lower. This makes it a good choice for applications which require both low power consumption and fast switching times.
In summary, the IXTH360N055T2 is an N-channel MOSFET which is specially designed for switching high current loads. Its low input capacitance and fast switching times make it an ideal choice for applications such as LED arrays, DC motors, and other high current applications. It is also capable of handling up to 22 A in the “on” state and up to 18 A in the “off” state, making it a good choice for both continuous and peak current applications.
The specific data is subject to PDF, and the above content is for reference
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