IXTH74N15T Allicdata Electronics
Allicdata Part #:

IXTH74N15T-ND

Manufacturer Part#:

IXTH74N15T

Price: $ 2.28
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 74A TO-247
More Detail: N-Channel 150V 74A (Tc) Through Hole TO-247 (IXTH...
DataSheet: IXTH74N15T datasheetIXTH74N15T Datasheet/PDF
Quantity: 1000
30 +: $ 2.05401
Stock 1000Can Ship Immediately
$ 2.28
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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The IXTH74N15T is a very versatile and powerful transistors device which utilizes field effect transistors, also known as FETs. This type of transistor device can be found in many electronics applications, such as amplifiers, computer memory, and data converters.

FETs, specifically MOSFETS, are the most commonly used type of FETs. They are composed of a source and a drain, as well as a gate which is arranged in a three terminal configuration. The source and drain act as the input and output terminals, while the gate controls the current flow through the device. This makes MOSFETs an ideal choice for applications requiring high switching speeds and low power dissipation.

The IXTH74N15T transistor is a high-density, low-voltage MOSFET which is specifically designed for use in power electronic applications. This device is well-suited for power supplies, motor controls, and other power control applications because it is able to switch the supply voltage in a very short period of time. The IXTH74N15T also has extended temperature range from -55° to +150°C, making it suitable for use in an even wider range of environments. Additionally, this device offers an extended on-state current capability when compared to other devices.

The working principle of the IXTH74N15T is similar to other MOSFET devices. When the gate voltage is applied, an electric field is created between the source and the channel. This electric field causes the electrons to move from the source to the channel, allowing current to flow from the drain to the source. As the amount of gate voltage increases, the amount of current which can flow through the device increases proportionally.

The IXTH74N15T also features a variety of features that make it well suited for different applications. These features include its low input capacitance, low on-resistance, and high voltage rating, as well as low input and output leakage. All of these features make the IXTH74N15T an attractive device for a variety of applications, including power electronic applications.

In conclusion, the IXTH74N15T is an excellent device for a variety of applications that require high speed, low power dissipation, and a high on-state current capability. Its working principle is similar to other MOSFET devices, and its features make it suitable for a number of different applications. By understanding the IXTH74N15T, users can better choose the right transistor for their needs and ensure that their electronics are running at their peak performance.

The specific data is subject to PDF, and the above content is for reference

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