| Allicdata Part #: | IXTH6N80A-ND |
| Manufacturer Part#: |
IXTH6N80A |
| Price: | $ 7.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 800V 6A TO-247 |
| More Detail: | N-Channel 800V 6A (Tc) 180W (Tc) Through Hole TO-2... |
| DataSheet: |  IXTH6N80A Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 6.29727 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTH6N80A is a type of single MOSFET (metal-oxide-semiconductor field-effect transistor) which is used for high-voltage switching applications. This device offers excellent on-resistance, low capacitance, fast switching times, and good thermal stability. It is also capable of operating at high frequencies and is widely used in power supply and motor control applications.
The IXTH6N80A is one of the more widely used single MOSFETs on the market due to its combination of features and performance. It has an extremelylinear operation, with a maximum drain-source voltage of 600V, a drain-source on-resistance of 0.2 ohms, and a breakdown voltage of 800V. This device is also rated for a maximum drain current of 8A and a total gate charge of 0.1mV.
The IXTH6N80A is designed to operate with either positive or negative gate-source voltages. This makes it ideal for use in a wide range of applications, from high-voltage relay operations to power switching. The IXTH6N80A has a maximum operating temperature of 150 degrees Celsius, making it well-suited for high-temperature environments.
The working principle of the IXTH6N80A is very simple. When a voltage is applied to the drain, current flows from the source to the drain and is controlled by the gate voltage. When the gate voltage is increased, the current flowing through the device increases. When the gate voltage is decreased, the current flowing through the device decreases. The amount of current flowing through the device is proportional to the amount of voltage applied to the gate. This makes the IXTH6N80A an ideal choice for applications in which linear current control is desired.
Due to its excellent performance characteristics, the IXTH6N80A is used in a variety of applications such as power switching, motor control, and high-voltage relay operation. It is also widely used in motor drivers and power supplies, as well as automotive, instrumentation, and industrial applications. Its linear operation makes it an ideal choice for many applications and its fast switching times and low capacitance make it a great choice for high-voltage applications.
In conclusion, the IXTH6N80A is a popular single MOSFET which is used for high-voltage switching applications. It offers excellent on-resistance, fast switching times, low capacitance, and good thermal stability. Furthermore, its linear operation and maximum drain current of 8A make it very versatile and well-suited for many applications. The IXTH6N80A is a great choice for anyone looking for a reliable, high-performance MOSFET.
The specific data is subject to PDF, and the above content is for reference
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