IXTH10P50 Allicdata Electronics
Allicdata Part #:

IXTH10P50-ND

Manufacturer Part#:

IXTH10P50

Price: $ 7.94
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 500V 10A TO-247AD
More Detail: P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTH10P50 datasheetIXTH10P50 Datasheet/PDF
Quantity: 1000
30 +: $ 7.14399
Stock 1000Can Ship Immediately
$ 7.94
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
FET Feature: --
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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IXTH10P50 application field and working principle

IXTH10P50 is an enhancement-type N-channel MOSFET, which has excellent high dv/dt and avalanche characteristics. It is widely used in the field of consumer electronics, power supplies and computer engineering. IXTH10P50 can be found in various temperature ranges and its wide range of operating voltages. Besides, it has low on-resistance, fast switching speed and good thermal stability.

Application Field

IXTH10P50 is primarily used in consumer electronics, such as lighting, heating and cooking equipment, audio and video equipment, electronic instruments, and household appliances. In addition to that, it is often used in power supply, motor drive and computer engineering. The device is equipped with an integrated gate label, meaning that it can reach regulated voltages or current.

Working Principle

The IXTH10P50 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) which works on the principle of field-effect conduction. When a voltage is applied across the gate and source terminals, it creates a field that increases the current between the drain and the source terminals. Moreover, the drain-source resistance is reduced in the presence of this electric field, allowing the current to flow freely.

The output voltage of a MOSFET is determined by the gate-source voltage and the amount of current flowing from the drain to the source. The gate voltage determines the level of current, which in turn is affected by the amounts of voltage on the gate. As a result, by varying the gate voltage, the drain-source resistance is altered, enabling an accurate output voltage.

Advantages

The IXTH10P50 offers some significant advantages. For instance, it has high output power, making it attractive for both consumer and industrial applications. It is also capable of sustained current, meaning that it can pass more current than other transistors. Moreover, the IXTH10P50 can be adjusted through the gate voltage, allowing for accurate control of the output voltage. Apart from that, the device is equipped with excellent thermal and electrical characteristics.

Disadvantages

Although the IXTH10P50 offers many advantages, it also has some drawbacks. For instance, it has a lower maximum switching speed compared to other MOSFETs. Moreover, it is sensitive to sudden changes in temperature, which can result in the improper functioning of the device. Additionally, the device has a high threshold voltage, meaning that it has to be used cautiously when handling high current applications.

Conclusion

In conclusion, the IXTH10P50 is an enhancement-type N-channel MOSFET, which is primarily used in consumer electronics and power supply, motor drive and computer engineering. This device is equipped with excellent electrical and thermal characteristics are attractive, while its wide range of operating voltages and its low on-resistance make it suitable for many applications. However, it is important to take into account of its lower maximum switching speed and sensitivity to sudden temperature changes.

The specific data is subject to PDF, and the above content is for reference

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