| Allicdata Part #: | IXTH21N50Q-ND |
| Manufacturer Part#: |
IXTH21N50Q |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 21A TO247AD |
| More Detail: | N-Channel 500V 21A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH21N50Q Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247AD (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | HiPerFET™ |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 250 mOhm @ 10.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
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The IXTH21N50Q is a common single Metal Oxide Semiconductor Field Effect Transistor (MOSFET), used to control and manage current in various electronic applications. It is one of the most popular and versatile semiconductor components available. This article will discuss the application field and working principle of the IXTH21N50Q.
Application Field
The main application field of the IXTH21N50Q MOSFET is power switching. This component is commonly used in high-power applications, such as power inverters and other power conditioning circuits. It is used to switch large currents and voltages, providing a cost-effective and reliable solution for controlling power in a wide range of applications.
In addition to power switching applications, the IXTH21N50Q MOSFET has a wide range of other uses including motor control, LED lighting, power supplies, audio amplifiers and other low-noise switching and amplification circuits. This high-performance component can be used in both high-voltage and low-voltage applications. It is also suitable for use in automotive and telecommunications applications.
Working Principle
The working principle of the IXTH21N50QMOSFET is based on MOSFET operation. In a MOSFET, a mobile channel is formed between the drain source by using applied gate-source voltage. When a gate-source voltage is applied, the channel forms a conductive pathway that allows current to flow between the drain source.
The IXTH21N50Q MOSFET is specifically designed to allow current to flow between the drain source without the application of a large bias voltage. This means that the component is able to operate in low voltage applications and still achieve high levels of performance.
The IXTH21N50Q MOSFET is designed to be bidirectional, which means that it is able to switch the current flow from source to drain, or from drain to source. This gives the component the advantage of being able to control current in both directions.
The IXTH21N50Q MOSFET is also designed to be low noise. This means that it does not produce significant amounts of background noise when switching current between the drain and source. This makes it suitable for use in noise-sensitive applications, such as high-end audio amplifiers.
Conclusion
The IXTH21N50Q MOSFET is a very versatile and popular semiconductor component, used to control and manage current in various electronic applications. Its main application field is power switching, but it is also suitable for a wide range of other uses. The IXTH21N50Q working principle is based on MOSFET operation and it is designed to be bidirectional, low-noise, and to allow current to flow between the drain source in low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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