IXTH26P20P

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In the world of integrated circuits, components like the IXTH26P20P are becoming increasingly popular. This versatile device is a native high voltage vertical power MOSFET, and is often considered to be a “blanket” part, meaning it can be used in a variety of applications. This article will discuss the IXTH26P20P’s field of application and inner-workings.

The IXTH26P20P is a natural fit for high power applications, due to its ability to handle continuous drain voltages of up to 26V and continuous drain currents of up to 25A. It also has low source-drain capacitance, with a typical value of 40 pF at V DS = 20V and V GS = 10V; this makes it ideal for high-frequency applications. Its on-resistance is also good, with R DSon = 0.085 Ω (typical) at V GS = 10V.

Aside from high power applications, the IXTH26P20P can also be put to good use in more delicate situations. Its high gate-source breakdown voltage of ± 20V makes it perfect for level shifting, and its package configuration—in a popular TO-220 5-pin SMD—means it can be incorporated into most any kind of circuit. Its 100% avalanche tested capacitance also ensures robust protection and reliability.

The IXTH26P20P works via a single internal Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The MOSFET is composed of four layers: the gate, the source, the drain, and the body (or substrate). Within the transistor, a gate electrostatic field is generated when a gate-source voltage (Vgs) is applied; this causes a conductive channel to form between the source and the drain terminals. In this way, the IXTH26P20P is able to amplify current and be used in a variety of applications.

In order for the IXTH26P20P to operate optimally, the body-source leak current must be kept to a minimum. To do this, a proper back bias must be applied to the body terminal. The IXTH26P20P also requires a stable power supply and low inductance in order to prevent any undesirable overshoot or ringing.

In conclusion, the IXTH26P20P is a powerful and versatile vertical pin MOSFET that is well suited to a variety of high power, high frequency, and level shifting applications. Its low on-resistance, high breakdown voltage, and robust body characteristics make it a popular choice among designers looking for reliable, long-term performance.

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