IXTH48P20P

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXTH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	462W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	103nC @ 10V
Series:	PolarP™
Rds On (Max) @ Id, Vgs:	85 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	48A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXTH48P20P Application Field and Working Principle

The IXTH48P20P is a member of the IXTH series of isolated insulated-gate field-effect transistors (IGFETs). This particular device is a single-gate, or unipolar, IGFET with a P-type substrate. The IXTH48P20P is used mainly in industrial systems, although it has a wide range of applications in any device which require power modulation and control. This article will explain the application field and working principle of the IXTH48P20P.The IXTH48P20P is mainly used in industrial applications as an "on-off" switch. It is an excellent choice for controlling the amount of power flowing through an electrical device, or for switching the current between a source and a load device depending on certain conditions or states. This device is also suitable for any application that requires a simple and reliable means of controlling power levels.The IXTH48P20P is phenomenally efficient in terms of power control. It offers a very high power-processing efficiency, with minimal power dissipation and large current handling capacity. That, combined with its low cost and fast switching speeds, makes it an ideal choice for many power modulating applications.The IXTH48P20P device operates based on the principle of junction field-effect transistors (JFETs). It works by creating a reverse bias (reverse-biased electrical field) between the source and drain terminals, which generate a field that is perpendicular to the channel connecting the two terminals. This reverse bias field inhibits current flow by creating a strong electric field and raising the threshold required for current flow through the channel.To turn the IXTH48P20P on, a positive voltage is applied to the gate terminal. This voltage increases the electrical field between the source and drain terminals, allowing more current to flow. To turn the IXTH48P20P off, the gate voltage is decreased to the point where little or no current is able to flow between the source and drain terminals.The IXTH48P20P also enables the user to adjust the level of current flowing through the device by varying the gate voltage. By varying the voltage, the user can control the amount of current passing through the IXTH48P20P and thus control the power load it\'s passing on to another device.The IXTH48P20P device is extremely reliable due to its rugged construction and highly efficient design. This makes it the ideal device for industrial applications that require a reliable, efficient and long-lasting switch or power-control system.In conclusion, the IXTH48P20P is a single-gate insulated-gate field-effect transistor designed for industrial use as an efficient and reliable power-control device. Its main function is to provide on-off switching of electrical current and variation of the amount of current passing through the device. It provides an effective, reliable and cost-effective solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description