IXTH130N15T

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The IXTH130N15T is a high voltage N-channel MOSFET that belongs to the single type of transistors−FETs, MOSFETs. It is designed for high voltage, high performance and is suitable for applications in switch−mode power supplies, motor and solenoid control, as well as other general purpose power switching applications.

The IXTH130N15T is a high voltage N-channel MOSFET that is designed for high speed power switching working with a drain-source voltage (VDS) of 150V and a drain current (ID) of 15A. It is designed for high voltage, high performance and offers fast switch times with improved switching characteristics and low on-resistance. This MOSFET is also available with integrated logic level transfers, allowing for only minimal signal delays.

The IXTH130N15T offers low gate charge (Qg) and gate-drain (Qgs) capacitance, allowing for high speed switching with fast turn-off times. It is fabricated with a low-voltage hydrogenated amorphous silicon (a-Si) technology, making it suitable for various voltages in switch-mode power supplies and other high-power applications. The device also has built-in gate protection against voltage transients caused by gate-induced drain leakage (GIDL), resulting in a very reliable switch.

The IXTH130N15T has an integral reverse-blocking body diode, which reduces the additional power dissipation caused by powering the MOSFET from a supply voltage. This is accomplished due to the body diode being a low forward-droop device, meaning it reduces the amount of power needed to maintain the device switch at a constant level. This leads to improved efficiency and power savings.

The IXTH130N15T utilizes an advanced packaging technology which also provides high thermal conductivity and heat dissipation capabilities. This helps to control heat in various applications where this MOSFET is most commonly used. The device also features excellent uniformity, permitting the design of consistent and reliable circuits.

The IXTH130N15T is very well suited for electronically controlled switching applications. This is due to its low on-resistance, gate source voltage (VGS) of 4V, and temperature range of -55°C to 175°C. This provides flexibility in various application areas and makes this device ideal for high voltage, high power switching applications.

The IXTH130N15T also offers excellent thermal stability and fast switching times. The device works by using the principle of hot-carrier injection. Hot carriers are injected into the channel of the MOSFET, which in turn causes a sharp increase in the drain current. This allows for fast switching speeds without consuming too much power.

The IXTH130N15T is a high voltage N-channel MOSFET that is perfect for power switching applications. It is designed for high speed power switching with a VDS of 150V and an ID of 15A. It is characterized by low gate charge, integrated logic level transfer and reverse-blocking body diode, offering excellent performance and reliability. In addition, it offers excellent thermal stability and fast switching times, making it ideal for use in many high voltage applications.

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