IXTH48N15 Allicdata Electronics
Allicdata Part #:

IXTH48N15-ND

Manufacturer Part#:

IXTH48N15

Price: $ 8.02
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 48A TO-247
More Detail: N-Channel 150V 48A (Tc) 180W (Tc) Through Hole TO-...
DataSheet: IXTH48N15 datasheetIXTH48N15 Datasheet/PDF
Quantity: 1000
30 +: $ 7.21812
Stock 1000Can Ship Immediately
$ 8.02
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 32 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
FET Feature: --
Power Dissipation (Max): 180W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Package / Case: TO-247-3
Description

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IXTH48N15 transistors are FETs, and more specifically, MOSFETs with single cells. They are commonly used in electronic designs with high-power applications, and they can also be used to control switching in lighter-load applications. The IXTH48N15 transistors provide high power handling, high reliability, and excellent cost-effectiveness.

The IXTH48N15 is a N-channel enhancement mode Field-Effect Transistor (FET) of the well-known MOSFET family. It is used as a switching device in a variety of high-power applications. The IXTH48N15 is a linear voltage-controlled transistor with 5 terminals: Source, Gate, Drain, Body, and Gate. Its drain-source voltage capability is 30 V, making it suitable for use in high-voltage applications. The IXTH48N15 has a maximum drain current capability of 5A, making it a powerful tool for applications where high power handling is required.

The device has a wide Gate threshold voltage range from 2V to 7V. This allows for flexibility in the design of the transistor, and makes it possible to select gate voltage ranges to suit different applications. The IXTH48N15 has a maximum thermal limit of 75 °C, which ensures reliable operation in high temperature environments. It also has a low input capacitance of 90pF, allowing for switching at high frequencies.

The IXTH48N15 is designed to provide lower power consumption and improved efficiency. It has an improved cutting-edge process technology that helps reduce power consumption and better heat dissipation. The process technology also helps achieve high switching speed, allowing designers to achieve faster output high-side and low-side switching. The IXTH48N15 also features ESD protection to ensure reliable operation in environments with highly charged electric fields.

The IXTH48N15 has a wide range of applications, including Power Switching, Switched Capacitor Circuits, and RF Transistor Amplifiers. Its N-channel enhancement construction makes it suitable for power-switching applications, such as motor control, solenoid control, and switching power supplies. The IXTH48N15 can also be used in switched capacitor circuits and RF amplifiers to provide high levels of output power. The IXTH48N15 is also compatible with a variety of gate-driver ICs, which makes it an ideal choice for high-power applications.

In summary, the IXTH48N15 is a powerful MOSFET designed for high-power applications. It provides high power handling, low input capacitance, excellent heat dissipation and improved transition times, making it suitable for a wide range of applications. The remarkable characteristics of the IXTH48N15 makes it an excellent choice for high-power applications where power handling and efficiency are essential.

The specific data is subject to PDF, and the above content is for reference

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