IXTH60N10 Allicdata Electronics
Allicdata Part #:

IXTH60N10-ND

Manufacturer Part#:

IXTH60N10

Price: $ 15.69
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 60A TO-247
More Detail: N-Channel 100V 60A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTH60N10 datasheetIXTH60N10 Datasheet/PDF
Quantity: 1000
30 +: $ 14.26260
Stock 1000Can Ship Immediately
$ 15.69
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 20 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTH60N10 is a 60V N-channel field effect transistor (FET) device that works on very low current. This device is specially designed for low-voltage, low-current applications such as power supply circuits, process control and instrumentation. It is designed to operate in a linear region and switch frequently. It is used in a variety of applications, ranging from industrial, scientific and medical devices, to consumer electronics.

The IXTH60N10 has a straightforward working principle. It consists of an N-type semiconductor material, which is connected to a source, drain and gate electrode. When a positive voltage is applied to the gate of the device, electrons from the N-type substrate are drawn towards the gate, creating a depletion region between the gate and the source. This creates an electric field across the channel, thereby controlling the flow of current. When the gate voltage is increased, further depletion occurs, thus reducing the channel current.

The IXTH60N10 is well-suited for low current applications due to its low on-resistance and gate charge. Its low on-resistance allows for very low levels of power consumption, while its gate charge prevents the device from experiencing excessive heat caused by current overloading. Its low gate charge also prevents false switching due to noise effects. Its fast switching speed allows it to respond quickly to control signals.

The IXTH60N10 has several advantages over other devices in its application field. Its low on-resistance and gate charge make it particularly suitable for applications such as motor control, power supplies, process control and instrumentation. Its fast switching speed allows it to handle a wide variety of applications and to respond quickly to controlling signals. It is also relatively easy to set up and use.

The IXTH60N10 is a reliable and cost effective FET device that is suitable for a wide range of applications. Its low on-resistance, gate charge and fast switching speed make it ideal for low current applications, such as process control and instrumentation. Its low gate charge also prevents false switching, ensuring consistent operation. Finally, its ease-of-use allows it to be quickly set up and used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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