| Allicdata Part #: | IXTH64N65X-ND |
| Manufacturer Part#: |
IXTH64N65X |
| Price: | $ 9.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 650V 64A TO-247 |
| More Detail: | N-Channel 650V 64A (Tc) 890W (Tc) Through Hole TO-... |
| DataSheet: | IXTH64N65X Datasheet/PDF |
| Quantity: | 18 |
| 1 +: | $ 8.25930 |
| 30 +: | $ 6.77269 |
| 120 +: | $ 6.11190 |
| 510 +: | $ 5.12077 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 890W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 143nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 51 mOhm @ 32A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTH64N65X is a type of field-effect transistor (FET) known as a metal-oxide-semiconductor FET, or MOSFET. It is a single-gate FET, meaning that it has a single gate input that controls the transistor\'s output. It is suitable for use in a wide range of applications, such as power management, signal processing, and switching.
The IXTH64N65X is a voltage-controlled device, meaning that its output is determined by the voltage applied to its gate. When its gate is below a certain threshold voltage, the MOSFET is off, and no current is allowed to flow through the channel between its drain and source terminals. When the gate voltage is increased above this threshold voltage, the current is allowed to flow, and the IXTH64N65X can be used to switch on electrical circuits.
The IXTH64N65X has a variety of advantages over other types of transistors. It has a much higher input impedance than bipolar transistors, meaning that it requires less current to switch on and off. It also has a low on-resistance, making it more efficient for switching high-power circuits. In addition, since it does not require a base current in order to switch on and off, it is more reliable and less prone to failure.
The IXTH64N65X is typically designed for use in low-power applications. It is commonly used as an electronic switch, where the input is provided by an electric signal, and the output switches devices such as relays, solenoids, lamps, or LEDs. It can also be used in power management circuits to control the flow of current by switching off certain components when they are not in use.
The IXTH64N65X is also often employed in radio-frequency applications. It is an ideal choice for digital circuits, as its switching characteristics are very reliable, and it is much better at withstanding the high levels of interference that are present in the radio-frequency environment. In addition, since it has a very low input capacitance, it is particularly suitable for circuits operating at high frequency.
The IXTH64N65X is capable of handling a wide range of operating voltages, from 6 volts up to 65 volts. This makes it particularly suitable for use in high-power applications, where it can be used to switch on and off large currents, as well as for signal processing, where it can be used to amplify weak signals.
Overall, the IXTH64N65X is a versatile, reliable, and cost-efficient FET, suitable for use in a wide range of applications. Its high input impedance, low on-resistance, and low input capacitance make it an ideal choice for digital signals, radio-frequency applications, and power management circuits. Its wide range of operating voltages makes it perfect for high-power applications, as well as signal processing.
The specific data is subject to PDF, and the above content is for reference
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| IXTH40N50L2 | IXYS | 9.07 $ | 1000 | MOSFET N-CH 500V 40A TO-2... |
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IXTH64N65X Datasheet/PDF