IXTH75N10

Vgs(th) (Max) @ Id:	4V @ 4mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXTH)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	260nC @ 10V
Series:	MegaMOS™
Rds On (Max) @ Id, Vgs:	20 mOhm @ 37.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTH75N10 Application Field and Working Principle

Transistors, FETs and MOSFETs are widely used in today\'s electronics devices. They are used in a variety of ways to control and regulate the flow of current, voltage and power in a circuit. Among those, the IXTH75N10 belongs to the family of single MOSFETs. MOSFETs are metal-oxide semiconductor field effect transistors (MOSFETs) and are widely used in amplifying and switching circuits. As compared to other types of transistors, MOSFETs are able to handle larger currents and voltages and they are also very efficient in terms of power consumption. The IXTH75N10 is an enhancement type of MOSFET and is used in switching and amplifying applications. The IXTH75N10 has a breakdown voltage rating of 75V, a drain-source saturation voltage of 1V and a gate to source threshold voltage of 2V. The IXTH75N10 is a 3-pin device with a drain in the middle, gate on the right and source on the left. The working principle of the IXTH75N10 is based on the MOSFET operation. When a MOSFET is used in an amplifying application, a gate voltage will be applied to control the source-drain channel. When the gate voltage is increased, the width of the source-drain channel will also be increased, leading to higher current flows and thus amplifying the signal. In switching applications, the IXTH75N10 can be used to control high-voltage load switching and can be used as a power transistor. When the gate voltage is applied to the IXTH75N10, it will switch on the source-drain channel, leading to a high-current flow. In contrast, when the gate voltage is removed, the IXTH75N10 will switch off the source-drain channel, preventing the current from flowing. The IXTH75N10 is suited for a wide range of applications. It can be used for automotive audio amplifiers, FET-input op-amps, motor/actuator control circuits and power switching applications. The IXTH75N10 also has a low on-state resistance, meaning that it has very low conduction losses due to its efficient operation. In conclusion, the IXTH75N10 is a high-performance enhancement type single MOSFET that is suitable for amplifying, switching and driving applications. It is able to handle large currents and voltages and is also very efficient in terms of power consumption. It is thus suited for a wide range of applications in automotive audio amplifiers, FET-input op-amps, motor/actuator control circuits and power switching applications.

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