IXTH7P50

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IXTH7P50 is a high power MOSFET manufactured by IXYS Integrated Circuits Division. It is designed for reliable operation under severe environmental conditions and for the most demanding power switching applications. The IXTH7P50 is a single-ended enhancement-mode MOSFET fabricated with N-channel design and capable of blocking voltages up to 600V. While it is designed for high-voltage switching and power conversion applications, it is also suitable for low- and high-speed applications.

This MOSFET has a high blocking voltage and low on-resistance for power switching applications. It features a very low input capacitance, making it suitable for switching applications requiring low power consumption. It also has a low drain-source leakage current, making it ideal for low-power applications.

IXTH7P50 applications range from motor control and power supply design, to automotive control applications and other general-purpose power electronics. It is well suited for telecom, industrial, and solar applications. It is especially useful in motor control applications where its high voltage and low on-resistance provides excellent performance. It can be used in a broad range of switching and power conversion applications, including DC-DC converters, AC power supplies, and many other power electronics.

IXTH7P50 MOSFETs operate with a basic working principle similar to that of other MOSFETS. The circuit consists of two regions of silicon separated by a highly doped field-oxygen region, or dielectric. The dielectric acts as an insulator to prevent current from flowing from one region to the other. When a voltage is applied to the gate electrode, an electric field is created, which lowers the barrier between the two regions of silicon. This allows for current to flow from the source to the drain and create the switching effect.

This MOSFET is equipped with an integrated self-protection feature, which prevents the device from turning on too quickly due to a sudden surge of voltage, which could potentially cause a malfunction or damage. This MOSFET also has a low power-on state capacitance, making it suitable for high speed switching applications such as data converters and transceivers.

In terms of packaging, IXTH7P50 is available in both standard and surface mount packages. It also has a low thermal resistance, making it suitable for high power switching applications. Its rated continuous drain current is up to 100A, making it suitable for higher power applications.

In conclusion, IXTH7P50 is a high power MOSFET designed for reliable operation under severe environmental conditions and for the most demanding power switching applications. It features a high blocking voltage, low on-resistance and low gate-source capacitance for efficient power switching. It is ideal for motor control, telecom, industrial, and solar applications, as well as for many other switching/power conversion applications. With its integrated protection feature and low thermal resistance, IXTH7P50 is an ideal choice for various applications.

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