| Allicdata Part #: | IXTH90P10P-ND |
| Manufacturer Part#: |
IXTH90P10P |
| Price: | $ 7.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 100V 90A TO-247 |
| More Detail: | P-Channel 100V 90A (Tc) 462W (Tc) Through Hole TO-... |
| DataSheet: |  IXTH90P10P Datasheet/PDF |
| Quantity: | 1208 |
| 1 +: | $ 6.43230 |
| 10 +: | $ 5.78718 |
| 100 +: | $ 4.75814 |
| 500 +: | $ 3.98656 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 (IXTH) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 462W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
| Series: | PolarP™ |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 45A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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A IXTH90P10P is a type of Field Effect Transistor (FET) that is commonly used in electronic applications. It is a single, depletion-mode MOSFET that operates on a logic level. The IXTH90P10P is commonly used in applications such as power supply and motor control, switched-mode power supplies, and analog signal conditioning applications.
The IXTH90P10P is a four-terminal device that consists of two N-type MOSFETs in parallel. This configuration forms an extremely low on-resistance device. The four terminals of the IXTH90P10P are the electrical signal output, the source, the drain, and the gate. The signal output of the IXTH90P10P is the output of the electrical signal when the gate voltage is 0V.
The working principle of the IXTH90P10P is based on the MOSFET principle. When the gate voltage is 0V, the source and drain terminals are cut off, and no current can flow through the device. When a positive voltage is applied to the gate plate, a thin inversion layer forms between the source and drain. This inversion layer forms a conductive path that allows current to flow through the device.
The IXTH90P10P is a popular choice when it comes to power switching and control applications. It can be used to switch high current and voltage, as well as providing low on-resistance. The IXTH90P10P has a low threshold voltage, which allows it to switch on and off quickly, making it ideal for applications with fast response times. Furthermore, due to its low on-resistance, it can reduce power losses in applications such as switched-mode power supplies and motor control.
The IXTH90P10P is also well-suited for analog signal conditioning applications. Its low input capacitance provides low power dissipation and reduced distortion in applications such as low-noise amplifiers, filters, and converters. Furthermore, its high transconductance ensures that it can respond to small input current signals with a large output current.
In summary, the IXTH90P10P is a single, depletion-mode MOSFET that is commonly used in applications such as power supply and motor control, switched-mode power supplies, and analog signal conditioning applications. It is a four-terminal device that has a low on-resistance and a low threshold voltage. Its low input capacitance and high transconductance make it suitable for use in applications such as low-noise amplifiers, filters, and converters.
The specific data is subject to PDF, and the above content is for reference
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