Allicdata Part #: | IXTP2N65X2-ND |
Manufacturer Part#: |
IXTP2N65X2 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 650V 2A X2 TO-220 |
More Detail: | N-Channel 650V 2A (Tc) 55W (Tc) Through Hole TO-22... |
DataSheet: | IXTP2N65X2 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.12304 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 180pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTP2N65X2 is a type of MOSFET commonly used in engineering applications and industrial automation. It is a widely adopted and a versatile MOSFET with a broad range of uses and applications. This article will discuss the IXTP2N65X2’s application field and working principle.
IXTP2N65X2 Application Field
The IXTP2N65X2 is a standard trench power MOSFET often used in low-voltage switching applications. It is a N-Channel high-speed switching MOSFET capable of delivering current up to 32 A and can handle continuous drain-source voltage of up to 600 V thus making it suitable for a wide range of purposes. It is designed with a stationary gate, thus making it suitable for AC applications. The IXTP2N65X2 also come with a fast reverse recovery charge and a high current density packing.
IXTP2N65X2 is used in automotive electronic systems, high-power switching circuits, digital power supplies, and power conversion systems. It is also commonly used in telecommunication and in robots requiring high speed and reliable switching. Furthermore, due to its high current switching capabilities and fast switching times, it is perfect for industrial automation applications such as welding machines and fabricator tools.
IXTP2N65X2 Working Principle
MOSFETs, such as the IXTP2N65X2, are built on a semiconductor substrate material. These MOSFETs have a metal-oxide-semiconductor field-effect transistor structure that consists of metal gate and source/drain regions located on the substrate. The device works on the principle of a metal-oxide-semiconductor field-effect transistor where the metal gate is used to control the flow of current between the source/drain regions. The gate/source/drain region determines the drain cases of the device.
When an electric field is applied to the metal gate, it induces a high electric current through the MOSFET structure from the source to the drain regions. This electric field affects the density of charge carriers inside the channel connecting the source and drain regions, thus controlling the channel resistance. The channel in turn dictates the current that can flow from the source to the drain. This configuration makes the IXTP2N65X2 an efficient and effective way of controlling current.
The IXTP2N65X2 are extremely reliable, low on-resistance, and have fast switching times. The device is optimized for fast switching making it a good choice in applications where high speed performance is required. It also comes with several features such as temperature compensating, which adds to its reliability.
In summary, the IXTP2N65X2 is a type of MOSFET commonly used in engineering applications and industrial automation due to its fast switching times, low on-resistance, and reliability. Its application field includes automotive electronic systems, high-power switching circuits, digital power supplies, robots, and industrial automation applications. Its working principle is based on the metal-oxide-semiconductor field-effect transistor structure where the metal gate is used to control the flow of current between the source/drain regions.
The specific data is subject to PDF, and the above content is for reference
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