Allicdata Part #: | IXTP7N60PM-ND |
Manufacturer Part#: |
IXTP7N60PM |
Price: | $ 1.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 4A TO-220 |
More Detail: | N-Channel 600V 4A (Tc) 41W (Tc) Through Hole TO-22... |
DataSheet: | IXTP7N60PM Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.97814 |
Vgs(th) (Max) @ Id: | 5.5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1180pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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IXTP7N60PM is a N-channel enhancement-mode vertical DMOS transistor. It is typically used as a high-current switch, especially in audio and power systems, as it is capable of very fast switching and can handle large voltages and currents. The IXTP7N60PM is specially designed for applications requiring high speed, high efficiency and low on-state resistance.
The IXTP7N60PM device has a sophisticated structure, consisting of five main parts: a polysilicon gate, a silicon nitride layer, the source and drain, the substrate and the source electrode. The polysilicon gate provides control of the current flow, while the source and drain are responsible for transmitting electrical power from the source, through the transistor and to the load. The source electrode serves as the interface between the transistor and the circuit. The silicon nitride layer acts as an insulation layer which prevents overvoltage damage.
The IXTP7N60PM operates in enhancement mode, meaning it requires an external gate-to-source voltage in order to turn it on. When the gate-to-source voltage is applied, the transistor will switch on and begin to pass the required current. Once the gate-to-source voltage is reduced, or turned off, the transistor will turn off, completely blocking current flow.
The IXTP7N60PM is most often used in power applications, due to its ability to pass large currents while maintaining excellent efficiency. It is also commonly used in switching applications due to its relatively low on state resistance and high speed capabilities. Additionally, the IXTP7N60PM can also be used in audio systems, as the low on-state resistance helps reduce distortion and maintain an optimal signal-to-noise ratio.
The IXTP7N60PM is a reliable and efficient device for numerous applications, specifically high current and high power applications. It is capable of very fast switching and can handle a variety of voltages and currents, making it an ideal device for many applications. Its efficient structure and low on-state resistance makes it an excellent choice for both audio and power systems.
The specific data is subject to PDF, and the above content is for reference
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