| Allicdata Part #: | IXTP76P10T-ND |
| Manufacturer Part#: |
IXTP76P10T |
| Price: | $ 3.79 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 100V 76A TO-220 |
| More Detail: | P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP76P10T Datasheet/PDF |
| Quantity: | 4094 |
| 1 +: | $ 3.44610 |
| 10 +: | $ 3.07944 |
| 100 +: | $ 2.52491 |
| 500 +: | $ 2.04454 |
| 1000 +: | $ 1.72431 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 298W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13700pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 197nC @ 10V |
| Series: | TrenchP™ |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP76P10T is one of the most commonly used power MOSFETs, which provides an extremely efficient, low-power interface for analog, digital and mixed signal control circuits. It is being progressively used in many applications due to its high power and low cost. In this article, we will discuss the application fields and working principle of IXTP76P10T.
When it comes to the application fields of IXTP76P10T, it is most commonly used for power supply, automation and motor control systems, solar inverters, automotive, industrial appliances and in general power control applications. Apart from all these, IXTP76P10T can also be used in switched mode power supplies, UPS and other applications that require a high current switch.
Talking about its working principle, IXTP76P10T is a voltage controlled MOSFET, meaning that it is activated when a voltage is applied to the gate thus allowing current to flow through the channel. This is done by adjusting the voltage of the gate in order to control the flow of current. The IXTP76P10T is able to regulate the current in both directions once the voltage has been set, allowing for better efficiency and control of power systems. The IXTP76P10T also has the ability to be connected in parallel, enabling the user to increase the current carrying capacity of the system.
Another interesting feature of the IXTP76P10T is its low gate threshold voltage, which allows for higher gate driving current, thus making it much easier to use for a wide range of power control applications. Apart from its ability to operate at higher current levels, the IXTP76P10T also has a very low power dissipation leading to improved system efficiency. In addition to this, the IXTP76P10T also features an integrated anti-parallel diode, which provides protection against over-voltage and transient voltage surges.
To conclude, IXTP76P10T is an extremely efficient and cost-effective MOSFET that can be used in various power control applications. Its low gate threshold voltage and low power dissipation enable it to be employed in a wide range of applications. The IXTP76P10T can be used to switch large voltages and currents and its anti-parallel diode further enhances the device\'s operational reliability.
The specific data is subject to PDF, and the above content is for reference
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