IXTP01N100D Allicdata Electronics
Allicdata Part #:

IXTP01N100D-ND

Manufacturer Part#:

IXTP01N100D

Price: $ 3.57
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1KV .1A TO-220AB
More Detail: N-Channel 1000V 100mA (Tc) 1.1W (Ta), 25W (Tc) Thr...
DataSheet: IXTP01N100D datasheetIXTP01N100D Datasheet/PDF
Quantity: 1500
1 +: $ 3.24450
50 +: $ 2.60820
100 +: $ 2.37636
500 +: $ 1.92427
1000 +: $ 1.62288
Stock 1500Can Ship Immediately
$ 3.57
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 110 Ohm @ 50mA, 0V
Drive Voltage (Max Rds On, Min Rds On): --
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTP01N100D is a single insulated-gate FET (Insulated-Gate Field-Effect Transistor) from STMicroelectronics, designed for various applications requiring high blocking voltage with low gate drive power.

The IXTP01N100D has a blocking voltage of 100V and can handle currents of up to 17A. It is optimized for applications such as high voltage DC-DC converter designs, motor and solenoid drives, and general power switching.

The IXTP01N100D operates on an input voltage range of 4.5V to 18V, and has a maximum on-state resistance of 120 mΩ. It has an operating temperature range of -55°C to 125°C and can be used as either a depletion or an enhancement FET.

The IXTP01N100D is provided in an isolation-friendly TO-220AB package for improved heat dissipation. This package also features insulated metal tabs for improved safety. The IXTP01N100D is RoHS compatible and halogen-free.

How the IXTP01N100D Works

The IXTP01N100D is an insulated-gate FET. In FETs, the presence of an electric charge at the gate of the device can modulate the electrical properties of the source-drain channel. This allows the device to be used as either an amplifier or a switch. This makes the FET a preferred device for applications with high blocking voltage and low gate drive power.

At the heart of the IXTP01N100D is a field-effect structure that consists of a drain, gate and source. The device is based on a semiconductor material, typically silicon, which has a variable resistance depending on the amount of charge applied to the gate. When a voltage is applied to the gate, it modulates the resistance of the channel and allows current to flow through the device. This modulation is used to control the flow of current in the device.

The IXTP01N100D is a depletion type device, meaning that it turns on when current is applied to the gate. It has a very low on-state resistance, meaning that when it is switched on, it conducts a lot of current. This makes the IXTP01N100D an ideal device for high voltage applications where high current is required. It also has a very low gate drive power requirement, making it perfect for low power applications.

The IXTP01N100D is capable of switching frequencies up to 10kHz, making it suitable for applications such as motor and solenoid drives. It also offers a wide range of control options from on/off control to pulse width modulation, making it suitable for a wide range of applications.

Conclusion

The IXTP01N100D is a single insulated-gate FET from STMicroelectronics, designed for various applications requiring high blocking voltage with low gate drive power. It has an input voltage range of 4.5V to 18V and can handle currents of up to 17A. It is optimized for applications such as high voltage DC-DC converter designs, motor and solenoid drives, and general power switching.

It has a very low on-state resistance, making it capable of switching frequencies up to 10kHz. It is provided in an isolation-friendly TO-220AB package and is RoHS compliant and halogen-free. The IXTP01N100D is an ideal choice for applications that require a high blocking voltage and low gate drive power.

The specific data is subject to PDF, and the above content is for reference

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