| Allicdata Part #: | IXTP02N120P-ND |
| Manufacturer Part#: |
IXTP02N120P |
| Price: | $ 1.21 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1200V 0.2A TO-220 |
| More Detail: | N-Channel 1200V 200mA (Tc) 33W (Tc) Through Hole T... |
| DataSheet: |  IXTP02N120P Datasheet/PDF |
| Quantity: | 1595 |
| 1 +: | $ 1.21000 |
| 10 +: | $ 1.17370 |
| 100 +: | $ 1.14950 |
| 1000 +: | $ 1.12530 |
| 10000 +: | $ 1.08900 |
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 104pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 10V |
| Series: | Polar™ |
| Rds On (Max) @ Id, Vgs: | 75 Ohm @ 100mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Tc) |
| Drain to Source Voltage (Vdss): | 1200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP02N120P is a high-performance N-channel enhanced mode MOSFET. It is produced by IXYS Corporation, a leading global supplier of advanced power semiconductor solutions. The IXTP02N120P is part of the IXFTDSR family of FET devices which are specifically designed for high-temperature and pressure applications. They are ideal for a wide range of applications, from power conversion to motor control, and are the perfect choice for high power, fast switching operations.
The IXTP02N120P is a single-channel enhancement-mode Metal-Oxide-Semiconductor Field-effect Transistor (MOSFET). This device is designed to operate at high temperatures and high power levels. Its features include a wide operating range, high-speed switching, low gate charge, and low on-state resistance. The device is a popular choice for high frequency switching applications and offers improved thermal stability, high-current handling capabilities, and excellent current drive capabilities.
The working principle of the IXTP02N120P is based on the Metal-Oxide-Semiconductor structure. This structure consists of a transistor gate and drain-source electrodes. When a positive voltage is applied to the gate, a conducting channel is created between the drain and source. The conducting channel is then used to pass current between the two terminals. As the gate voltage is increased, more electrons are drawn into the channel and the current can be increased.
The IXTP02N120P has a number of applications in industrial, medical, automotive, and other industries. This device is ideal for applications such as power converters, motor control, power management, and high-speed switching. It is also used in applications such as welding, high-voltage switching, DC/DC converters, and high-power applications.
The IXTP02N120P is an ideal choice for applications that require high current or power handling and fast switching speed. It offers improved thermal stability, low gate charge, and excellent current drive capabilities for efficient, reliable operation. The wide operating range and high-speed switching of the device make it a suitable choice for industrial and automotive applications.
In conclusion, the IXTP02N120P is a highly reliable and efficient MOSFET device specifically designed for high-temperature and pressure applications. It offers improved thermal stability, high-current handling, low gate charge, and excellent current drive capabilities to ensure reliable and efficient operation in challenging environments. It is ideal for applications such as power converters, motor control, power management, and high-speed switching, making it the perfect choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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