| Allicdata Part #: | IXTP4N80P-ND |
| Manufacturer Part#: |
IXTP4N80P |
| Price: | $ 1.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 800V 3.5A TO-220 |
| More Detail: | N-Channel 800V 3.6A (Tc) 100W (Tc) Through Hole TO... |
| DataSheet: |  IXTP4N80P Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 0.95344 |
| Vgs(th) (Max) @ Id: | 5.5V @ 100µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 14.2nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 3.4 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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.The IXTP4N80P is an N-Channel Power MOSFET typically used in power switching applications. The device is designed to reduce conduction losses and take advantage of the fast switching speed of MOSFETs. The maximum current carrying capability and low on-state resistance make it a versatile device and one of the most popular power MOSFETs on the market.
The IXTP4N80P has an N-channel Enhancement mode substrate and a VDSS of 400 Volt, with a maximum current carrying capability of 4A. The on-state resistance (RDS(on)) of the device is 95mOhm for a Gate-Souce voltage of 4.5V and a VGS of 10V. The device has an exceptionally fast switching speed at 31 nsec and is available in SOT-223 and TO-252 packages. The device also has a high dV/dt capability, making it suitable for applications where fast and reliable power transfer is necessary.
The IXTP4N80P application area and working principle are similar to other N-Channel Power MOSFETs. This type of MOSFETs is used in a variety of applications in the automotive, home appliance and consumer electronics industries. These applications range from high power switching and load regulation to motor control and single-placed logic circuits. Examples of typical applications include switch mode power supplies, DC-DC converters, motor controls, load control and interface systems.
The operation and characteristics of the IXTP4N80P is similar to, but improved over that of any other N-Channel Power MOSFET in the market. The device has a low on-state resistance, fast switching speed and high dV/dt capability which make it one of the most popular power MOSFETs in the market. This makes it a versatile device and suitable for a variety of applications.
When using the IXTP4N80P, it is important to observe certain safety measures. Firstly, its Gate-Source voltage should always be operated between 0V and 10V. An overvoltage between the Gate-Source and Drain can cause irreversible damage to the MOSFET. Secondly, the device must be operated within its specified temperature band. An excessive increase in temperature can cause permanent damage to the MOSFET. Lastly, the maximum power dissipation of the device must not be exceeded.
In conclusion, the IXTP4N80P is an exceptionally fast switching N-Channel Power MOSFET. It is well suited for high power switching and load regulation applications with its low on-state resistance and high dV/dt capabilities. The device is available in two packages and is capable of withstanding harsh environmental conditions. Safety instructions must be observed when using the device to ensure correct device operation and a long lifetime.
The specific data is subject to PDF, and the above content is for reference
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