IXTP120N04T2 Allicdata Electronics
Allicdata Part #:

IXTP120N04T2-ND

Manufacturer Part#:

IXTP120N04T2

Price: $ 1.33
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 40V 120A TO-220
More Detail: N-Channel 40V 120A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: IXTP120N04T2 datasheetIXTP120N04T2 Datasheet/PDF
Quantity: 1000
50 +: $ 1.19549
Stock 1000Can Ship Immediately
$ 1.33
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Series: TrenchT2™
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP120N04T2 is a field-effect transistor (FET) used in power management and switching circuits. It is from IXYS Integrated Circuits Division\'s Super FET II™ family and is a single enhancement-mode N-channel FET.

The IXTP120N04T2 offers a range of features that make it suitable for a variety of applications, including power switching circuits, start or stop commands, DC/DC converter control, and PFC control. It also offers a wide input voltage range of 6 to 25 volts, allowing it to be used in battery operated applications. The IXTP120N04T2 also features low gate charge, low on-state resistance, high trestle interchangeability, low desirable drive current, external source/drain clamping, phase shift control, and reverse body diode protection.

The IXTP120N04T2 is manufactured using IXYS\' proprietary SuperFET II™ process, which combines advanced Epi. The SuperFET II™ process provides device immunity to negative-voltage transients and excellent switching characteristics. The IXTP120N04T2 is available in a TO-251 package and is rated for 115A of continuous drain current.

The working principle of the IXTP120N04T2 depends on the type of FET it is. In this case, it is a single enhancement mode n-channel FET. The FET works by providing a voltage-controlled connection between a source terminal and a drain terminal. When a low voltage is applied to the gate terminal, the connection between the source and drain terminals is increased, allowing current to flow from source to drain. When the voltage applied to the gate terminal is increased, the connection between the source and drain terminals is decreased, thus reducing the amount of current flowing from source to drain.

The IXTP120N04T2 is ideal for power management and switching circuits in a variety of applications, such as start or stop commands, power converters, motor control, and automotive electronics. It is also an ideal choice for battery-powered applications due to its wide input voltage range. The IXTP120N04T2 is manufactured using IXYS\' proprietary SuperFET II™ process, which provides device immunity to negative-voltage transients and excellent switching characteristics.

In conclusion, the IXTP120N04T2 is a single enhancement-mode N-channel FET from IXYS\' Super FET II™ family. It is suitable for a variety of applications, such as power switch control, motor control, and automotive electronics. It features a wide input voltage range, low gate charge, low on-state resistance, and external source/drain clamping. The IXTP120N04T2 is manufactured using IXYS\' proprietary SuperFET II™ process and is rated for 115A of continuous drain current.

The specific data is subject to PDF, and the above content is for reference

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