| Allicdata Part #: | IXTP08N100D2-ND |
| Manufacturer Part#: |
IXTP08N100D2 |
| Price: | $ 1.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 0.8A TO220AB |
| More Detail: | N-Channel 1000V 800mA (Tc) 60W (Tc) Through Hole T... |
| DataSheet: | IXTP08N100D2 Datasheet/PDF |
| Quantity: | 283 |
| 1 +: | $ 1.34000 |
| 10 +: | $ 1.29980 |
| 100 +: | $ 1.27300 |
| 1000 +: | $ 1.24620 |
| 10000 +: | $ 1.20600 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 60W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14.6nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 21 Ohm @ 400mA, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 800mA (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP08N100D2, produced by Infineon, is a N-Channel MOSFET with a maximum drain-source voltage of 100V, maximum drain current of 8A, and RDS on of 0.0035 Ω. It is a very useful component in a variety of applications, owing to its small size and moderate on-resistance. IXTP08N100D2 has several uses in the field of electronics, and it can be used to control current flow, provide an input or output, act as a switch, or protect devices.
The IXTP08N100D2 is a type of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). It has a conductive channel containing electrons between the source and the drain. A gate voltage is applied to the MOSFET, which changes the conductivity of the channel and thus the current flow between the source and the drain. The drain-source voltage dictates the amount of current that can flow through the channel. As the voltage across the drain and source increases, the drain current increases until the transistor saturates.
The IXTP08N100D2 is a type of N-channel MOSFET. This means that the current flows from the source to the drain when there is a positive voltage applied to the gate. This type of MOSFET is commonly used in many circuits as it is an efficient way to control and switch electrical signals. The small size and low on-resistance of the IXTP08N100D2 makes it ideal for use in small circuits, where space is at a premium.
The IXTP08N100D2 can be used in several applications. It is often used in power supplies, as it can be used to shut off the supply when the voltage goes above a certain threshold. It is also used in motor control circuits as it can be used to control the speed of the motor. It can also be used as a switch in logic circuits, allowing for the efficient control of signals. It can also be used to protect sensitive circuits from excessive current or voltage.
The IXTP08N100D2 is a key component in many modern electronic circuits. Its small size and low on-resistance make it an ideal choice for applications where space is at a premium. It is also versatile, as it can be used to control, switch, and protect electronic circuits. With its wide range of uses, the IXTP08N100D2 is a very important component in modern electronics.
The specific data is subject to PDF, and the above content is for reference
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IXTP08N100D2 Datasheet/PDF