IXTP10P50P Allicdata Electronics
Allicdata Part #:

IXTP10P50P-ND

Manufacturer Part#:

IXTP10P50P

Price: $ 4.02
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 500V 10A TO-220
More Detail: P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTP10P50P datasheetIXTP10P50P Datasheet/PDF
Quantity: 2175
1 +: $ 3.65400
10 +: $ 3.26025
100 +: $ 2.67340
500 +: $ 2.16481
1000 +: $ 1.82574
Stock 2175Can Ship Immediately
$ 4.02
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: PolarP™
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTP10P50P is a field-effect transistor (FET) manufactured by Fairchild Semiconductor. It is a metal-oxide semiconductor field-effect transistor (MOSFET), a type of transistor that operates by using an electric field to control the conductivity of the metal-oxide layer. The IXTP10P50P is a single polarity N-channel energy efficient MOSFET with an incredibly low Rds(on) at 0.07 ohms. The device is available in a PowerPAK SC-75 package and offers an excellent combination of efficiency, power dissipation, and cost effectiveness.

The IXTP10P50P is a P-channel MOSFET, which consists of an insulated-gate field-effect control structure and an N-channel source-drain region. The insulated-gate field-effect control structure contains a semiconductor channel that bridges the source-drain region and serves as an electrical path for conduction. The gate of the MOSFET is used for switching and controlling the flow of current between the source-drainer region. The N-channel MOSFET is normally ON and functions as an inverting amplifier with a high input impedance and low output impedance.

The IXTP10P50P is designed for applications with high power requirements and is commonly used for motor drive and power management applications. Its low Rds(on) makes it an excellent choice for power supplies and switching applications. The IXTP10P50P is also ideal for use in DC-DC converters, Class-D audio amplifiers and PFC stages. It has a maximum drain source voltage of 50V, a maximum drain current of 10A and a maximum gate charge of 260nC. It has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C.

The IXTP10P50P is designed to offer the best possible performance in terms of switching speed, power efficiency and reliability. It utilizes advanced fabrication techniques to ensure a low Ron and low gate charge while providing excellent thermal performance. It also includes advanced protection features such as electrostatic discharge (ESD) protection and device over-temperature protection (OTP).

The IXTP10P50P is an excellent choice for demanding power supply and motor drive applications due to its low Rds(on) and power dissipation, its excellent thermal performance, and its advanced protection features. It offers a cost-effective way to achieve great performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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