| Allicdata Part #: | IXTP10P50P-ND |
| Manufacturer Part#: |
IXTP10P50P |
| Price: | $ 4.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 500V 10A TO-220 |
| More Detail: | P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-... |
| DataSheet: |  IXTP10P50P Datasheet/PDF |
| Quantity: | 2175 |
| 1 +: | $ 3.65400 |
| 10 +: | $ 3.26025 |
| 100 +: | $ 2.67340 |
| 500 +: | $ 2.16481 |
| 1000 +: | $ 1.82574 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | PolarP™ |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP10P50P is a field-effect transistor (FET) manufactured by Fairchild Semiconductor. It is a metal-oxide semiconductor field-effect transistor (MOSFET), a type of transistor that operates by using an electric field to control the conductivity of the metal-oxide layer. The IXTP10P50P is a single polarity N-channel energy efficient MOSFET with an incredibly low Rds(on) at 0.07 ohms. The device is available in a PowerPAK SC-75 package and offers an excellent combination of efficiency, power dissipation, and cost effectiveness.
The IXTP10P50P is a P-channel MOSFET, which consists of an insulated-gate field-effect control structure and an N-channel source-drain region. The insulated-gate field-effect control structure contains a semiconductor channel that bridges the source-drain region and serves as an electrical path for conduction. The gate of the MOSFET is used for switching and controlling the flow of current between the source-drainer region. The N-channel MOSFET is normally ON and functions as an inverting amplifier with a high input impedance and low output impedance.
The IXTP10P50P is designed for applications with high power requirements and is commonly used for motor drive and power management applications. Its low Rds(on) makes it an excellent choice for power supplies and switching applications. The IXTP10P50P is also ideal for use in DC-DC converters, Class-D audio amplifiers and PFC stages. It has a maximum drain source voltage of 50V, a maximum drain current of 10A and a maximum gate charge of 260nC. It has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C.
The IXTP10P50P is designed to offer the best possible performance in terms of switching speed, power efficiency and reliability. It utilizes advanced fabrication techniques to ensure a low Ron and low gate charge while providing excellent thermal performance. It also includes advanced protection features such as electrostatic discharge (ESD) protection and device over-temperature protection (OTP).
The IXTP10P50P is an excellent choice for demanding power supply and motor drive applications due to its low Rds(on) and power dissipation, its excellent thermal performance, and its advanced protection features. It offers a cost-effective way to achieve great performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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