| Allicdata Part #: | IXTP8N65X2-ND |
| Manufacturer Part#: |
IXTP8N65X2 |
| Price: | $ 1.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 650V 8A X2 TO-220 |
| More Detail: | N-Channel 650V 8A (Tc) 150W (Tc) Through Hole TO-2... |
| DataSheet: |  IXTP8N65X2 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 0.94185 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXTP8N65X2 is a revolutionary field-effect transistor (FET) developed by the Insight & Innovation Technology Company (IITC). This is a single-channel MOSFET that provides an integrated power management solution for highly efficient and reliable DC/DC power conversion.
The IXTP8N65X2 operates from an input voltage of 5V up to 8V and is capable of handling up to 8 Amps of continuous current. It has a maximum drain-source voltage (Vds) of 80V and a maximum drain-source breakdown voltage (Vgs) of 60V. The device is also equipped with on-chip ESD protection for an extra level of protection.
The IXTP8N65X2 is ideal for a wide range of applications, including automotive, industrial equipment, medical devices, communications, and consumer electronics. It is capable of driving a wide range of loads, such as motors, solenoids, and valves, and is well suited for Industrial Ethernet devices.
The IXTP8N65X2 works by using a MOS transistor as a switch. A MOS transistor is a three-terminal device consisting of a gate, drain, and source, with the gate and drain regions separated by an insulating layer of silicon dioxide. When a voltage is applied to the gate, the MOS transistor will change its conductance between the source and drain terminals. This can be used to switch between the high (on) and low (off) states, which then controls the current flowing through the circuit.
The IXTP8N65X2 has an internal gate drive stage which controls the on and off states of the device. It features an integrated under-voltage lock-out (UVLO) function, which helps protect against accidental operation at low input voltages. The device also has built-in thermal protection, allowing it to shut off in case of an over-temperature condition to prevent damage.
The IXTP8N65X2 is a high-performance, cost-effective MOSFET solution for a variety of industrial and consumer applications. Its integrated ESD protection and thermal monitoring capabilities allow it to deliver reliable and efficient power conversion in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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