Allicdata Part #: | IXTP110N055T2-ND |
Manufacturer Part#: |
IXTP110N055T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 110A TO-220 |
More Detail: | N-Channel 55V 110A (Tc) 180W (Tc) Through Hole TO-... |
DataSheet: | IXTP110N055T2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3060pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 6.6 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP110N055T2 is a power transistor module made by IXYS Corporation, a global leader in the design and manufacture of semiconductors. It is a Field Effect Transistor (FET) with a single output channel. The FET is capable of switching loads up to 55A, 40V and is typically used for high-current, high-speed power switching applications.
The IXTP110N055T2 is a N-Channel Enhancement-Mode Metal-Oxide Semiconductor FET, or MOSFET. The MOSFET works by using an electric field to control how much current passes through it. The electric field will cause a voltage drop across the terminals of the MOSFET, and this voltage drop stands in proportion to the current that it allows to pass through. This type of FET is known as an enhancement-mode because the electric field must first be set up with a voltage to enable the flow of current through the FET. Once the voltage is set up, the current is allowed to pass.
The IXTP110N055T2 is designed to handle up to 55A of current with a voltage of 40V and is optimized for high-speed switching applications. The device has a low output capacitance, which is beneficial for device signal speed and frequency response. The device also has a low on-resistance and a near zero reverse transfer capacitance which, when combined, make the device very efficient even when handling large current loads, as it shifts less of the load\'s power to the gate. This reduces the power losses due to the heat generation.
When it comes to applications, the IXTP110N055T2 is ideal for power switching applications, power supply designs, and high-speed switching. The device is also suitable for medium-voltage motor drives, high-speed motor control circuits and motor gate drivers. Additionally, the device is suitable for high-power, high-current applications such as switch mode power supplies, solenoids, and high power LEDs. Due to its high-current handling capability and its low on-resistance and reverse transfer capacitance, the device is very suitable for flyback converters and power factor correction circuits.
The IXTP110N055T2 is a great device for applications which require low on-resistance, fast switching, and large current capabilities. Combined with its compact size, good thermal characteristics and lower power losses, the IXTP110N055T2 is an ideal solution for high-power, high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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IXTP200N055T2 | IXYS | -- | 101 | MOSFET N-CH 55V 200A TO-2... |
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