IXTP450P2

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2530pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	43nC @ 10V
Series:	PolarP2™
Rds On (Max) @ Id, Vgs:	330 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTP450P2 Application Field and Working Principle

The IXTP450P2 is a single N-channel, Depletion Mode, enhancement type power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed and developed by IXYS Corporation, and features an oxide-isolated chip design.MOSFETs are widely used electronic switch devices employed in high power electronic systems at the per-unit and per-circuit level. They are especially useful in circuits that require low voltage to switch and divert a high current, as well as in high speed switching circuits. This IXTP450P2 falls into this category, and provides high performance and reliability in high current power applications. The IXCT450P2 is mainly applicable in off-line conversion applications with load currents ranging up to 800A in pulsed and static mode. It operates efficiently over a wide range of drain-source voltages of 100V to 600V, and can be used in control circuits for motor drives, UPS systems, welding systems and other industrial and commercial applications.

IXTP450P2 Structure and Working Principle

The IXTP450P2 consists of three terminals (or pins): gate, drain and source. Gate refers to an insulated metal oxide layer, which acts as a switch to control the current that flows between the drain and the source. When source is made positive and the drain negative, a high positive voltage known as gate-source voltage (Vgs) is applied at the gate terminal. This causes the channel between the source and drain to become thin and allow current to flow through. This current flow is known as ON-state. On the other hand, when the drain is made positive and the gate negative, a low negative voltage (Vgs) is applied at the gate terminal. This induces channel inversion, which causes the channel region to become thick and inhibits the flow of current through the channel. This current flow is known as OFF-state.

IXTP450P2 Benefits and Key Features

The IXTP450P2 MOSFET provides a simple and reliable solution for power applications requiring high current and efficient energy conversion. Its key features include :

• Simple, reliable and economical for industrial and commercial application.
• Wide range of drain-source voltage range of 100V to 600V.
• High currents up to 800A in pulsed or static applications.
• Enhanced performance with low on-resistance.
• High isolation voltage of 1000V.
• Integrated parasitic diode.
• Compact SIP package.

The IXTP450P2 has numerous benefits over traditional silicon and Schottky diodes due to its superior performance and low on-resistance. It offers improved performance and efficiency in high current power applications, with a wide temperature range. It can also be used in motor drives, UPS systems, welding systems and other industrial and commercial applications that require efficient power management. Furthermore, this MOSFET is built with an oxide-isolated chip design to provide an outstanding level of immunity from surge and EMC disturbances, while maintaining low EMI. It also features integrated parasitic diodes and a compact SIP package with increased integration of external components and improved reliability. In summary, the IXTP450P2 is an ideal choice for high power applications due to its simple, reliable and economical design. It offers a wide range of drain-source voltages and currents up to 800A, and provides enhanced performance with low on-resistance, high isolation voltage and a compact SIP package. With its oxide isolation chip design, it provides an improved level of reliability and immunity from EMC disturbances. Therefore, it is a good choice for applications requiring consistent and reliable performance in high current and energy conversion applications.

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