| Allicdata Part #: | IXTP8N70X2M-ND |
| Manufacturer Part#: |
IXTP8N70X2M |
| Price: | $ 2.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CHANNEL 700V 4A TO220 |
| More Detail: | N-Channel 700V 4A (Tc) 32W (Tc) Through Hole TO-22... |
| DataSheet: |  IXTP8N70X2M Datasheet/PDF |
| Quantity: | 46 |
| 1 +: | $ 1.83960 |
| 50 +: | $ 1.48529 |
| 100 +: | $ 1.33673 |
| 500 +: | $ 1.03966 |
| 1000 +: | $ 0.86143 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220 Isolated Tab |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 32W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 10V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 550 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 700V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP8N70X2M is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) suitable for use in a variety of different applications. It has an adjustable on-state current, so it can be easily adjusted for different levels of current in different applications. Additionally, it is designed for both voltage and current applications, making it an ideal choice for a wide range of applications.
The IXTP8N70X2M is designed for applications that require both high-voltage and high-current operations. It is capable of operating at a maximum voltage of 80 volts, and a maximum current of 25 amps. This makes it suitable for a wide range of applications, including those that require both high voltage and high current operations.
The IXTP8N70X2M has an on-state current that can be adjusted, so it can be easily adjusted for different levels of current in different applications. This makes it an ideal choice for applications that require both adjustable on-state current levels, and high-voltage and high-current operations.
The IXTP8N70X2M is also equipped with an anti-parallel diode, which helps to prevent excessive reverse-bias leakage currents. This is particularly useful for applications such as motor control, where it is important to ensure that there are no excessive current flows.
The IXTP8N70X2M has a number of advantages over other types of MOSFETs. It is designed for both voltage and current applications, making it an ideal choice for a wide range of applications. Additionally, it is also capable of operating at a maximum voltage of 80 volts, and a maximum current of 25 amps. This makes it suitable for a wide range of applications, including those that require both high voltage and high current operations.
The IXTP8N70X2M is also equipped with an anti-parallel diode, which helps to prevent excessive reverse-bias leakage currents. This is particularly useful for applications such as motor control, where it is important to ensure that there are no excessive current flows.
Lastly, the IXTP8N70X2M is also thermally protected against self-heating. This helps to extend its operating life, as self-heating can reduce the overall performance of the device. This means that the IXTP8N70X2M is able to provide reliable operation for longer periods of time, even under high-load conditions.
In sum, the IXTP8N70X2M is an excellent choice for a variety of different applications. It is designed for both voltage and current applications, making it an ideal choice for a wide range of applications. Additionally, it is also capable of operating at a maximum voltage of 80 volts, and a maximum current of 25 amps. This makes it suitable for a wide range of applications, including those that require both high voltage and high current operations. Additionally, it is also equipped with an anti-parallel diode, which helps to prevent excessive reverse-bias leakage currents. Lastly, the IXTP8N70X2M is also thermally protected against self-heating, helping to extend its operating life. As such, the IXTP8N70X2M is an excellent choice for applications requiring both adjustable on-state current levels, and high-voltage and high-current operations.
The specific data is subject to PDF, and the above content is for reference
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