| Allicdata Part #: | IXTP08N100P-ND |
| Manufacturer Part#: |
IXTP08N100P |
| Price: | $ 1.27 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 800MA TO-220 |
| More Detail: | N-Channel 1000V 800mA (Tc) 42W (Tc) Through Hole T... |
| DataSheet: |  IXTP08N100P Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.14106 |
| Vgs(th) (Max) @ Id: | 4V @ 50µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 42W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
| Series: | Polar™ |
| Rds On (Max) @ Id, Vgs: | 20 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 800mA (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTP08N100P is a type of transistor commonly referred to as an insulated-gate bipolar transistor (IGBT). It is a popular device for various applications because it combines features of a regular transistor, like a switching transistor, with features of an insulated gate field-effect transistor (IGFET). These features make the IXTP08N100P an attractive choice for a wide range of applications, such as power conversion, motor control, and high-power switching.
The IXTP08N100P is a PowerShell8W N-channel MOSFET, which means it is a Metal-oxide-semiconductor field-effect transistor (MOSFET) with a N-type channel. This type of transistor has better performance in high-power switching and power conversion compared to a P-channel MOSFET. It uses an insulated gate to control current flow, with the insulated gate being electrically disconnected from the conducting channel.
The IXTP08N100P has an impressive maximum drain-source voltage of up to 800V, meaning it makes a good choice for high power applications such as power conversion, motor control, and more. It also has a maximum drain current of up to 6A and a maximum gate-source voltage of +/-20V. Its fast switching and low on-state resistance make it a great choice for high speed switching applications.
The IXTP08N100P works by using the insulated gate to control a switch between the source and drain of the device. In normal operation, a positive gate voltage turns the transistor ON, allowing current to flow between the source and drain. When a negative voltage of suitable magnitude is applied to the gate, the transistor’s internal resistance increases and ultimately switches the transistor OFF. This simple process is the basis of the IXTP08N100P’s operation.
The IXTP08N100P is a great choice for a variety of applications due to its impressive performance characteristics and low cost. Its fast switching speed and low on-state resistance make it a great choice for high speed switching applications, while its high maximum drain-source voltage and maximum drain current make it ideal for power conversion and motor control applications. Its insulated gate makes it easy to control, making it a great choice for all kinds of applications.
The specific data is subject to PDF, and the above content is for reference
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