Allicdata Part #: | IXTP3N60P-ND |
Manufacturer Part#: |
IXTP3N60P |
Price: | $ 0.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 3A TO-220 |
More Detail: | N-Channel 600V 3A (Tc) 70W (Tc) Through Hole TO-22... |
DataSheet: | IXTP3N60P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 0.89258 |
Vgs(th) (Max) @ Id: | 5.5V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 411pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 9.8nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 2.9 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The IXTP3N60P is a special type of field-effect transistor (FET) known as a P-channel power MOSFET. This type of FET has become increasingly popular in recent years as a low-cost and low-power alternative to other types of semiconductor devices, such as bipolar transistors and logic ICs. The IXTP3N60P is designed for a variety of applications, such as motor control, power switching, and audio amplifiers. As such, it is an invaluable tool for anyone looking to design and develop electronic products.
The IXTP3N60P is a P-channel power MOSFET, which means that the current flows from the source to the drain when a positive voltage is applied to the gate. This is due to the special structure of the device, which includes an insulated gate and source regions, surrounded by an N-type channel region between the source and the drain. The gate region is populated with electrons and is negatively charged when no voltage is applied. When an appropriate voltage is applied, the electrons are released into the N-type channel region and the resistance between the source and the drain is lowered, allowing current to flow. This function is reversed when the voltage is removed, and the electrons return to the gate region, increasing the resistance between the source and the drain and blocking the current flow.
The IXTP3N60P is designed for use in junction power circuits such as switching power supplies, motor control circuits, and audio amplifiers. Its relatively low threshold voltage makes it ideal for such applications as it helps to decrease power consumption and reduce switching losses. Its large drain-source voltage (Vds) of 600V also makes it suitable for a wide range of power applications and its high drain-source saturation current (Idss) of 60A makes it especially suitable for motor drive circuits.
The IXTP3N60P is a very reliable device and is designed to operate over a wide temperature range. It also requires very little gate charge, making it suitable for low-power applications. Moreover, it is capable of switching at high speeds, helping to reduce audible noise in audio amplifiers.
In conclusion, the IXTP3N60P is an excellent choice for use in switching power supplies, audio amplifiers, and motor control circuits. Its low threshold voltage and large drain-source voltage make it suitable for a wide range of power applications. Its high drain-source saturation current also makes it ideal for use in motor drive circuits. Its reliability, low gate charge, and high switching speed make it an invaluable tool for anyone looking to design and develop electronic products.
The specific data is subject to PDF, and the above content is for reference
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