| Allicdata Part #: | IXTP3N50P-ND |
| Manufacturer Part#: |
IXTP3N50P |
| Price: | $ 0.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 3.6A TO-220 |
| More Detail: | N-Channel 500V 3.6A (Tc) 70W (Tc) Through Hole TO-... |
| DataSheet: | IXTP3N50P Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 0.75058 |
| Vgs(th) (Max) @ Id: | 5.5V @ 50µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 70W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 409pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tube |
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The IXTP3N50P transistor is a discrete semiconductor device used to amplify and switch electronic signals. It is packaged in a TO-220F case, and belongs to the family of single insulated gate Field Effect Transistors (FETs). Commonly known as a MOSFET, this type of transistor uses a gate to control the on/off state of current flow between the source and drain. The IXTP3N50P is designed to work under an avalanche voltage of 500 V and a maximum channel temperature of 150 degrees Celsius.
The IXTP3N50P has a wide array of applications, including power supplies and breadboards, power amplifiers, audio amplifiers, current-limiting circuits, switching relays, frequency divider circuits, motor control, preamps, and many more. Its built-in protection mechanism prevents it from being prone to overheating and short circuit conditions. It is also capable of stable operation with high-power switching up to 3A, for applications that require low-losses or high-speed execution.
The working principle of IXTP3N50P is based on four primary elements—drain, source, gate and body. In order to model the operation of the transistor, each of these elements needs to be considered in relation to each other. The source and drain are the two conductive terminals, and these are connected to a voltage source. If the gate is left open (which means it is not actively controlling its own current flow), the voltage across the source and drain will cause current to flow, thus enabling the transistor to act as a switch.
The gate is connected to the body, which is also referred to as the substrate. The voltage applied to the gate will affect the resistance between the source and drain. This, in turn, alters the current flowing through the transistor. A positive voltage applied to the gate increases the resistance, which reduces the current and turns the transistor “off,” while a negative voltage reduces the resistance and allows more current to flow, turning the transistor “on.”
The IXTP3N50P can also be used in a circuit arrangement called an inverter. This is an important logical circuit that produces a complement (inverse) output signal when an input signal is applied. A MOSFET such as the IXTP3N50P is capable of driving high-speed switching, which is vital for maintaining a stable output signal in an inverter circuit.
Overall, the IXTP3N50P transistor is a versatile and powerful device, with a wide range of applications. Its single insulated gate FET design makes it reliable and capable of switching and amplifying signals, while its built-in protection mechanism and ability to operate under an avalanche voltage of 500V, makes it a preferred choice for applications ranging from power supplies to breadboards.
The specific data is subject to PDF, and the above content is for reference
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IXTP3N50P Datasheet/PDF