IXTQ110N055P

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The IXTQ110N055P is a low-voltage, fast-switching N-channel enhancement-mode field effect transistor (FET) with a maximum drain current of 55 A. This field-effect transistor has an improved thermal design for better power dissipation, low gate and drain capacitance for higher switching frequency, and an N-channel for high-side switching. These features make the IXTQ110N055P well suited for high-side switching applications, such as advanced DC/DC converters, DC/AC inverters, low-loss switching in power designs, and lighting LED banks.

The IXTQ110N055P is based on the IXYS integrated circuit technology’s JH Power-Trench technology. The IXTQ110N055P is available in a TO-220SMIS package and is specified over an operating temperature range of -55°C to 150°C. Its maximum drain-to-source voltage (V DS ) is 600 V and its maximum drain current is 55 A. The device has a gate-source voltage range of 5 V to 20 V, an on-state resistance of 11 ohm, and a continuous drain current of 37 A.

The working principle of a field-effect transistor is similar to that of a standard bipolar junction transistor (BJT). A channel is formed between the source and drain of a FET by applying a voltage to the gate terminal. This voltage creates an electric field, which attracts electrons from the semiconductor surface into the channel, hence forming a conductive path from the source to the drain. As the gate voltage increases, the channel becomes wider, thereby allowing for more current flow through the FET.

The N-channel structure of the IXTQ110N055P uses a source and drain that are both P-type semiconductor material. When the gate voltage is low, a vertical N-type channel is formed between the source and drain, which blocks the flow of current. When the gate voltage is increased, the electric field in the N-type channel increases, which causes the electrons in the semiconductor material to rearrange themselves and form a horizontal N-type channel. This increases the conductivity and allows current flow to occur between the source and the drain. The N-channel structure also provides the FET with a high-side switching capability, allowing it to be used in applications where the drain is at a higher potential than the source.

The IXTQ110N055P offers improved thermal design for enhanced power dissipation, lower gate and drain capacitance for higher switching frequency, and an N-channel for high-side switching. This makes it an excellent choice for power designs, especially those utilizing advanced DC/DC converter, DC/AC inverters and multi-bank LED lighting controls.

The IXTQ110N055P is ideal for applications that require a low-voltage, fast-switching N-channel FET with high-side switching capability. Its small package size, high performance and excellent thermal design make it a great choice for power designs. Its low capacitance also allows for high switching frequencies and better power dissipation, making it a perfect choice for applications that require high-side switching.

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