IXTQ36N30P Allicdata Electronics
Allicdata Part #:

IXTQ36N30P-ND

Manufacturer Part#:

IXTQ36N30P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 36A TO-3P
More Detail: N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTQ36N30P datasheetIXTQ36N30P Datasheet/PDF
Quantity: 28
Stock 28Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: PolarHT™
Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTQ36N30P Application Field and Working Principle

The IXTQ36N30P is a single N-channel enhancement mode MOSFET. This type of MOSFET is commonly used in a variety of consumer and industrial applications due to its wide range of capabilities and relatively low cost. This transistor is specifically designed for applications that require high current handling capability, high reliability, and low power dissipation. The IXTQ36N30P can be used in audio devices, motor control systems, battery-powered systems, and digital circuits.

The IXTQ36N30P works by carrying out two basic functions. Firstly, it acts as a switch, allowing a current to flow through the component when it is "on" by reducing its resistance. Secondly, the IXTQ36N30P also acts as an amplifier, controlling the amount of current that can flow through it. This is achieved by taking advantage of the junction capacitance between the drain and source regions. When the transistor is off, this junction capacitance will be small, resulting in a low resistance, allowing a larger amount of current to flow. When the transistor is on, however, this junction capacitance increases, resulting in a higher resistance and reducing the amount of current that can flow through it.

The IXTQ36N30P can handle maximum drain-source voltage of 500V, has a continuous drain current of 36A, and a maximum drain current of 42A. Its maximum allowable power dissipation is 180 Watts, and its gate-source voltage is rated at 25V. This makes it an ideal choice for applications where high current handling, low power dissipation, and reliable operation are desired. The IXTQ36N30P can also be used in audio circuits, such as amplifiers, as it has excellent audio performance.

The IXTQ36N30P is most commonly used in power circuits, motor control applications, and audio devices. It is highly reliable and able to handle high currents, and its low power dissipation makes it an ideal choice for battery-powered systems. The IXTQ36N30P can also be used in digital circuits, such as logic gates, as it has excellent switching characteristics. The transistor\'s excellent audio performance also makes it an excellent choice for audio applications.

In summary, the IXTQ36N30P is a single N-channel enhancement mode MOSFET that offers excellent current handling and low power dissipation. It can be used in a variety of applications, such as power circuits, audio circuits, motor control systems, and digital circuits. Its junction capacitance allows it to act as both a switch and an amplifier, and its superior performance in audio applications makes it an excellent choice for audio circuits.

The specific data is subject to PDF, and the above content is for reference

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