| Allicdata Part #: | IXTQ480P2-ND |
| Manufacturer Part#: |
IXTQ480P2 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 52A TO3P |
| More Detail: | N-Channel 500V 52A (Tc) 960W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ480P2 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 960W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 108nC @ 10V |
| Series: | PolarP2™ |
| Rds On (Max) @ Id, Vgs: | 120 mOhm @ 26A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTQ480P2 is a single N-channel trench MOSFET which offers superior power handling capabilities in power management applications. It utilizes the latest trench technology to provide excellent RDS (on) and high Drain-Source Breakdown Voltage (BVDSS). It features low gate charge and low On-Resistance. The IXTQ480P2 is suitable for switching applications such as synchronous rectifier or enabling in DC-DC converters, robotic servo systems and motor control applications. Additionally, the IXTQ480P2 is suitable for load switching and as a power switch for motor control.
The IXTQ480P2 operates by transistors. A transistor is a semiconductor device that is used as an amplification and switching device. This means that it is able to switch between two states: open or closed. The IXTQ480P2 uses a Field Effect Transistor (FET) in an N-channel design. This means that the transistor is controlled by an electric field instead of a current input. This provides additional protection against damage as the FET will not be destroyed when exposed to high voltage spikes.
The working principle of the IXTQ480P2 is to provide high power handling capability using its excellent RDS (on) values. The low gate charge of the IXTQ480P2 allows high switching frequencies to be achieved, which reduces the chance of damage from the high power. Additionally, the low on-resistance ensures minimal power loss. The IXTQ480P2 also has an isolation temperature of 175°C which means that it can operate in higher temperatures for a longer period of time.
The IXTQ480P2 can be used for a variety of applications, including synchronous rectifier for DC-DC converters, load switching, and motor control applications. The IXTQ480P2 features a drain-source breakdown voltage (BVDSS) of 600 V and an operating temperature range of -55°C to +175°C, making it suitable for power management applications in a variety of environments. Additionally, the IXTQ480P2 has a Gate-Source Threshold Voltage (Vgs), which is a measure of how much voltage is required to turn on the transistor, of 6V. This provides additional protection, as higher voltages will not accidentally cause the transistor to turn on.
In summary, the IXTQ480P2 is an excellent choice for power management applications. It offers high power handling capabilities with its excellent RDS (on) and low gate charge. The IXTQ480P2\'s low on-resistance reduces power loss. Additionally, its high temperature tolerance and drain-source voltage make it suitable for a wide range of applications. The IXTQ480P2 is a great option for applications where power management is essential.
The specific data is subject to PDF, and the above content is for reference
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