IXTQ120N15T

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P
Mounting Type:	Through Hole
Operating Temperature:	--
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:	150nC @ 10V
Series:	PolarHT™
Rds On (Max) @ Id, Vgs:	16 mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXTQ120N15T is a silicon N-channel Power MOSFET specifically designed for high voltage, high-current switching applications. It is also commonly referred to as an Insulated-gate Bipolar Transistor (IGBT), due to its characteristics, which are quite similar to those of a Bipolar Junction Transistor (BJT). The IXTQ120N15T is widely used in various switching applications that require high voltage, high-current operation, such as DC-DC converters, computer power supplies and high-power motor drives. It has a maximum drain-source voltage (V_DS) of 1200 V and a maximum continuous drain current (I_D) of 15 A, while providing excellent switching capability and excellent temperature stability. Due to its high voltage, high-current characteristics and its low R_DS(on), the IXTQ120N15T is an excellent choice for applications that require the MOSFET to be “on” most of the time and operate under heavy loads. The IXTQ120N15T is also suitable for pulse-width-modulated (PWM) control applications, due to its robust switching characteristics.The IXTQ120N15T is similar to a Bipolar Junction Transistor (BJT) in terms of its working principle. In a BJT, current flows between the base and the emitter, and the collector and the emitter, which is known as the forward bias. In a MOSFET, on the other hand, current flows between the source and the drain and between the gate and the source, which is known as the depletion mode (or negative gate voltage) operation. The R_DS(on) of the IXTQ120N15T is quite low, which allows it to switch on quickly and dissipate less power. In addition, the MOSFET has an isolated gate, which reduces the possibility of external EMI noise or any other harmful signals entering the circuit. There are several advantages of the IXTQ120N15T over other types of MOSFETs and transistors. First, the IXTQ120N15T has a very low R_DS(on), which allows it to switch on rapidly and with minimal switching losses. Second, the isolated gate of the IXTQ120N15T minimizes the possibility of any external interference or EMI noise entering the circuit. Third, the IXTQ120N15T is relatively stable over temperature, making it suitable for a wide range of applications. Last, but not least, the IXTQ120N15T has a maximum drain-source voltage (V_DS) of 1200 V, which allows it to be used in high-voltage applications. Overall, the IXTQ120N15T is an excellent choice for high voltage, high-current applications such as DC-DC converters, computer power supplies and high-power motor drives. Its excellent switching characteristics make it suitable for PWM applications, while its low R_DS(on) helps reduce power losses. The IXTQ120N15T also has an isolated gate, which reduces the possibility of any external interference or EMI noise entering the circuit, thus making it highly reliable.

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