Allicdata Part #: | IXTQ180N085T-ND |
Manufacturer Part#: |
IXTQ180N085T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 85V 180A TO-3P |
More Detail: | N-Channel 85V 180A (Tc) 430W (Tc) Through Hole TO-... |
DataSheet: | IXTQ180N085T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 430W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 85V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXTQ180N085T is a type of MOSFET (metal oxide semiconductor field-effect transistor) created for applications where a high amount of output current is specified. IXTQ180N085T design is made to reduce the quantity of on-state resistance while sustaining a higher current rating. This type of MOSFET is often manufactured in applications where a constant output power is required. This is possible due to the lower on-state resistance, which directly reduces the amount of heat produced and therefore the amount of power wasted.Generally, MOSFETs like the IXTQ180N085T are used in power circuits. By using this type of MOSFET, a designer can maintain a higher output power, reduce heat wastage and increase efficiency. Their use in power circuits is important as it helps reduce power loss, improves power efficiency, allows for higher current, and increases system reliability.The IXTQ180N085T is a straightforward design, making it easy to use and reliable. It consists of a single MOSFET package, which contains a source, gate, and drain. The source is connected to a negative voltage and the gate to a positive voltage. When the gate voltage is higher than the source voltage, a current will flow from the source to the drain. This is the basis of how the MOSFET works, allowing it to provide a high amount of current output.The primary benefit of the IXTQ180N085T is that it offers a relatively low on-state resistance compared to other MOSFETs. Lower on-state resistance means that less current is required to create a desired voltage/current transfer ratio, reducing the amount of energy needed to operate the MOSFET. This also leads to a reduction in heat generated by the MOSFET, meaning that it can be used in applications where power efficiency is critical.It is important to note that the IXTQ180N085T is only suitable for use in certain applications. It is not recommended for use in applications where high power dissipation is expected, as it is not designed to handle such high levels of power. Additionally, its use in analog applications is not recommended due to the higher switching speed.In conclusion, the IXTQ180N085T is an efficient and reliable MOSFET designed for applications where a large output current is required. It offers a high current rating and low on-state resistance, meaning it can reduce power losses and improve power efficiency. However, it is important to make sure that you are only using this MOSFET in applications where it is suitable.
The specific data is subject to PDF, and the above content is for reference
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