Allicdata Part #: | IXTQ26N60P-ND |
Manufacturer Part#: |
IXTQ26N60P |
Price: | $ 4.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 26A TO-3P |
More Detail: | N-Channel 600V 26A (Tc) 460W (Tc) Through Hole TO-... |
DataSheet: | IXTQ26N60P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 3.83082 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | PolarHV™ |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ26N60P is a device that belongs to the transistors and field effect transistors, more specifically, single MOSFETs family. It features a semiconductor material with which it is built and it provides a wide range of potential applications. In this article, we will investigate the application field and working principle of the IXTQ26N60P.
When it comes to the application field of the IXTQ26N60P, it is commonly used in switching applications where it helps to regulate the current or voltage in devices. It can be used in many applications such as in cellular phones and other wireless communication devices, in consumer electronics, in battery-powered appliances, in automotive applications, and in many other areas. The IXTQ26N60P is also often used to control the power distribution and supply the current to various parts of an electrical system with ease.
In addition to the application, it is also important to check the IXTQ26N60P working principle to understand and explain its usage better. That being said, the IXTQ26N60P makes use of metal–oxide–semiconductor technology, in which the metal–oxide–semiconductor gate (MOS gate) is the main component and conductor of the device. In this case, the MOS gate acts as an insulator between two conductors, thus allowing the flow of electrons between them.
The working of the IXTQ26N60P is determined by the electrical fields present in the circuit. When voltage is applied to the MOS gate, it acts as a switch, allowing current to flow between the two conductors depending on the direction of the applied voltage, either in an inverse-parallel fashion or in a direct-parallel fashion. When the voltage is zero, the switch is turned off and no current can pass, allowing the IXTQ26N60P to act as a switch.
The IXTQ26N60P is also capable of carrying out logic operations, such as an AND or NAND operation. In this case, when two signals are applied to the device, the output depends on the relationship between the two, either an AND or an NAND operation. This makes the IXTQ26N60P extremely versatile and suitable for a variety of tasks, from basic logic operations to complex control applications.
Furthermore, the IXTQ26N60P is built with a feature that allows the device to block reverse voltages in the event of a transient or surge. This reverse-blocking feature is important when the device is connected to a sensitive system, as it ensures the integrity of the system by preventing excessive current or voltage from entering it.
It is quite clear that the IXTQ26N60P is an excellent device as it offers both versatility and reliability. It is often used in switching applications and helps to regulate and control the current or voltage. It also useful in logic operations and helps to protect sensitive systems from excess current or voltage. The IXTQ26N60P is an excellent choice for a wide range of applications, and its features make it an ideal device for a variety of tasks.
The specific data is subject to PDF, and the above content is for reference
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IXTQ180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-3... |
IXTQ182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-3... |
IXTQ200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-3... |
IXTQ200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-3... |
IXTQ220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-3... |
IXTQ220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-3... |
IXTQ230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-3... |
IXTQ240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-3... |
IXTQ250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-3... |
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