IXTQ140N10P

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The IXTQ140N10P, also referred to as a N-channel Enhancement Mode MOSFET, is a semiconductor device made from silicon. It is a type of FET (Field Effect Transistor) that is designed to allow electric current to flow through it when a certain voltage is applied. In most instances, the IXTQ140N10P is used in electronic circuits to provide modulation of power or switching of electric signals.

A MOSFET is an abbreviation of Metal Oxide Semiconductor Field Effect Transistor that utilizes an insulated gate to modulate current flow. When a voltage is applied to the gate, it creates an electric field that attracts mobile electrons resulting in a current that flows directly between the drain and the source. An important feature of the MOSFET is that the voltage at the gate can be used to control the drain-source current.

The IXTQ140N10P is designed with a voltage rating of 100V and an on/off ratio of 140N10. It holds a continuous drain current of 10 amps and a maximum drain to source voltage of 100 volts. It also offers a power dissipation of 181 Watts and a maximum gate drive voltage of 10V. As for its features, the IXTQ140N10P has positive temperature coefficient, parasitic protection, high transconductance, and low input capacitance.

In terms of its application field, the primary purpose of the IXTQ140N10P is to switch loads from a relatively low voltage source, although it can be used in a variety of digital and analog circuits. Additionally, it is used in devices that require switching of large currents as it is capable of handling maximum current up to 10 amperes. It is also used in automated industrial control devices such as contactors, relays, solenoids, signal switching circuits, and touch sensitive switches.

The IXTQ140N10P’s working principle involves the application of a voltage to its gate. When the voltage is applied, it creates an electric field within the MOSFET that attracts electrons, allowing current to flow from the source to the drain. It should be noted that the voltage at the gate can be used to control the drain-source current. The amount of current flowing through the device can be increased or decreased by applying different levels of voltage at the gate.

The IXTQ140N10P is a high performance N-channel Enhancement Mode MOSFET that offers excellent performance for switching and modulation of power or electric signals for a variety of applications. It is suited for use in automated industrial control devices, signal switching circuits, contactors, and touch sensitive switches, as well as in many other digital and analog circuits. With its high transconductance and low input capacitance, the IXTQ140N10P is well suited for these applications and more.

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