Allicdata Part #: | IXTQ120N15P-ND |
Manufacturer Part#: |
IXTQ120N15P |
Price: | $ 4.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 120A TO-3P |
More Detail: | N-Channel 150V 120A (Tc) 600W (Tc) Through Hole TO... |
DataSheet: | IXTQ120N15P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 3.75753 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 600W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ120N15P is a high-powered transistor that is manufactured by IXYS. It is a n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and is designed for switching and amplifier applications in the medium power range. It is part of the IQTQ series of transistors, which have been designed to meet the needs of switching and amplifier applications that require higher currents and higher voltages.
The IXTQ120N15P is an n-channel MOSFET that is capable of operating in both linear and switching modes. In linear mode, it can handle currents up to 120A and voltages up to 900V. In switching mode it can handle up to 60A and 600V. It is also capable of withstanding temperatures up to 175°C. It has a drain-source breakdown voltage of 1200V.
The working principle of the IXTQ120N15P is based on the principles of field-effect transistors. It works by applying an electric charge to a gate electrode, which is able to control the flow of current through a channel between the source and drain. The gate electrode is insulated from the channel by the dielectric material that is used to construct the transistor. The current through the channel is determined by the voltage on the gate electrode, which can be used to control the current through the channel. This enables the IXTQ120N15P to be used as a switch or an amplifier.
The IXTQ120N15P is typically used in medium power applications such as motor drives, power supplies, switching power amplifiers and other applications that require a high current or voltage. It is also commonly found in high power applications such as power converters and motor drives. Due to its high current and voltage ratings, it can be used in a wide range of applications.
In summary, the IXTQ120N15P is an n-channel MOSFET designed for medium power applications. It is capable of operating in both linear and switching modes, with current and voltage ratings of 120A and 900V respectively. It has a drain-source breakdown voltage of 1200V and is capable of withstanding temperatures up to 175°C. The working principle of the IXTQ120N15P is based on the principles of field-effect transistors, and it is commonly used in medium power applications such as motor drives, power supplies, switching power amplifiers and high power applications such as power converters and motor drives.
The specific data is subject to PDF, and the above content is for reference
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