| Allicdata Part #: | IXTQ26N50P-ND |
| Manufacturer Part#: |
IXTQ26N50P |
| Price: | $ 3.98 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 26A TO-3P |
| More Detail: | N-Channel 500V 26A (Tc) 400W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ26N50P Datasheet/PDF |
| Quantity: | 78 |
| 1 +: | $ 3.97530 |
| 10 +: | $ 3.85604 |
| 100 +: | $ 3.77654 |
| 1000 +: | $ 3.69703 |
| 10000 +: | $ 3.57777 |
Specifications
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 400W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| Series: | PolarHV™ |
| Rds On (Max) @ Id, Vgs: | 230 mOhm @ 13A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The IXTQ26N50P is a type of metal oxide semiconductor field effect transistor (MOSFET) that is commonly used in electronic applications due to its robust performance and low power consumption. This type of transistor is most commonly used in consumer, automotive, industrial, and communications applications. This article will discuss the application field and working principle of the IXTQ26N50P transistor.The IXTQ26N50P is a type of N-channel, enhancement-mode power MOSFET that operates in the range of 30V and has an RDS(on)max as low as 1Ω. It is capable of carrying about 550A of current and has a ldss (drain-source saturation voltage) of -1.6V. The transistors are typically used in high-frequency switching applications such as motor control, LED backlighting, and power converters. They can also be used in motor drives, power supplies, and power switching applications.The transistor is made up of four main elements – the gate, drain, source, and body. The Source and Drain are the two terminals where the electrical current flows in and out of. The gate is used to open and close the channel and the body determines the type of MOSFET used.As a type of FET, the IXTQ26N50P is an extremely efficient switch that can operate with very low power consumption. It is a unipolar device, meaning that its operation only requires one electrical field instead of two like in a bipolar transistor. This means that it is extremely efficient in terms of power consumption and it can be used in applications where a very low power consumption is desirable.The IXTQ26N50P works based on the principle of the MOS capacitor. The gate acts as a capacitor and when the voltage difference between the gate and the drain is equal to or larger than the threshold voltage Vth, the gate opens and an electrical current flows through the transistor. This current can then be adjusted by changing the gate voltage. The IXTQ26N50P transistor is also suitable for use in applications where a high switching speed is necessary, as it has a very fast switching time of 30ns. The transistor also provides a low gate charge of 0.1nC and a low gate input capacitance of 3nC, which allows for fast switching operations.The transistor also has a very low on-state resistance (RDS(on)) of about 0.4Ω and a maximum drain-source voltage of 500V. This allows for efficient power handling and minimizes power losses when using this device in power switching applications.In conclusion, the IXTQ26N50P is a type of N-channel, enhancement-mode power MOSFET that offers robust performance, low power consumption, and high frequency switching capabilities. It is suitable for high-current applications such as motor control, LED backlighting, and power converters, and its low on-state resistance, high drain-source voltage, and fast switching time make it an ideal device for power switching applications.
The specific data is subject to PDF, and the above content is for reference
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