| Allicdata Part #: | IXTQ75N10P-ND |
| Manufacturer Part#: |
IXTQ75N10P |
| Price: | $ 2.43 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 75A TO-3P |
| More Detail: | N-Channel 100V 75A (Tc) 360W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ75N10P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 2.18442 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 360W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
| Series: | PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTQ75N10P is a high-voltage fast-switching field-effect transistor (FET) designed for a wide range of applications, including motor control, switching power supplies, voltage regulation, and converters. This article will explain the IXTQ75N10P’s application field and its working principle.
Application Field
The IXTQ75N10P’s high voltage and fast switching speed make it well suited for motor control, switching power supplies, voltage regulation and converters. Thanks to its high current capability and low on-resistance, it is ideal for regulating large amounts of current and providing precise control of power in industrial, automotive and aerospace applications. Additionally, the IXTQ75N10P’s tight packaging allows it to be used in high-density, high-efficiency power converters.
The IXTQ75N10P is also suitable for use as an alpha-delta modulator in data converters and stream converters. It provides fast response, low distortion and low losses, making it perfect for applications involving high speed data transmission, such as Radar and sonar systems. Additionally, it can be used in voltage regulation, such as in welding and other high current applications.
Working Principle
The IXTQ75N10P is an insulated-gate field-effect transistor (IGFET). Its main components are an insulated Gate, Source, and Drain. The insulated gate is a capacitance plated between two gate electrodes. When the positive or negative gate voltage is applied to the insulated gate, an electric field is created. This electric field alters the properties of the FET’s channel, allowing current to flow between the source and drain.
The IXTQ75N10P is a depletion-mode field effect transistor (FET). This means the current is conducted when the gate-to-source voltage is at zero volts. When the gate-to-source voltage is increased, the current flowing between the source and drain is reduced. This allows the IXTQ75N10P to be used as a power switch, allowing a large amount of current to be turned on and off quickly.
The IXTQ75N10P is also a high-voltage fast-switching FET, which means it can withstand high voltages and switch quickly. This makes it well suited for controlling high power motors, switches and converters. The fast switching speed also makes it ideal for data transmission applications, such as Radar and sonar.
The IXTQ75N10P’s performance is further enhanced by its low on-resistance, which allows it to regulate high current levels with greater efficiency. In addition, it can be used with low-voltage drive circuits, making it suitable for use in automotive and industrial applications.
In summary, the IXTQ75N10P is a high-voltage fast-switching field-effect transistor designed for a wide range of applications, including motor control, switching power supplies, voltage regulation, and converters. Its high voltage and fast switching speed, along with its low on-resistance and tight packaging make it ideal for controlling large amounts of current in high-density, high-efficiency power converters. Additionally, it is suitable for use as a data converter and for voltage regulation applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| IXTQ26N50P | IXYS | -- | 78 | MOSFET N-CH 500V 26A TO-3... |
| IXTQ200N10T | IXYS | -- | 36 | MOSFET N-CH 100V 200A TO-... |
| IXTQ36N50P | IXYS | -- | 27 | MOSFET N-CH 500V 36A TO-3... |
| IXTQ88N30P | IXYS | -- | 63 | MOSFET N-CH 300V 88A TO-3... |
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| IXTQ160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-3... |
| IXTQ160N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 160A TO-3... |
| IXTQ180N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 180A TO-3... |
| IXTQ180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-3... |
| IXTQ182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-3... |
| IXTQ200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-3... |
| IXTQ200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-3... |
| IXTQ220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-3... |
| IXTQ220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-3... |
| IXTQ230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-3... |
| IXTQ240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-3... |
| IXTQ250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-3... |
| IXTQ280N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 280A TO-3... |
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