Allicdata Part #: | IXTQ220N075T-ND |
Manufacturer Part#: |
IXTQ220N075T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 220A TO-3P |
More Detail: | N-Channel 75V 220A (Tc) 480W (Tc) Through Hole TO-... |
DataSheet: | IXTQ220N075T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 220A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTQ220N075T is a field effect transistor (FET) device manufactured by IXYS, a company based in the Silicon Valley area of California. The device is a standard single gate MOSFET (metal-oxide-semiconductor field effect transistor) and is designed to switch electrical current. It has a number of advantages over other types of transistors, particularly in applications that require high voltage and power handling capability.
Applications
IXTQ220N075T transistors can be found in a variety of applications. They are used in switching applications in automotive, marine and industrial electronics, as well as consumer devices. In automobiles, they can be used to control the power and voltage in the engine and control various components in the electrical system. In consumer electronics, they are used in mobile phones and other portable devices, where they control power and regulate the power flow to the component.
The IXTQ220N075T is also used in audio amplifiers, power supplies and other microcontroller and computer applications where switching needs to be performed at high voltages and currents. In addition, it can be used in motor control systems, television and radio receivers, and other electronic equipment requiring switching of power supplies.
Working Principle
The IXTQ220N075T operates by using the electron field effect of the gate material to control the flow of current. When a voltage is applied to the gate, electrons move through the gate and onto the substrate material, which produces an electric field. This electric field builds up until it is strong enough to create a barrier that restricts the flow of current through the device.
If the voltage applied to the gate is increased, the electric field increases, which reduces the current passing through the device. Conversely, if the voltage is decreased, the electric field decreases and the current flow increases. In this way, the IXTQ220N075T can be used to precisely control the current passing through it, allowing it to be used in applications that require precise power management and control.
Advantages
The IXTQ220N075T is a versatile transistor with a number of advantages over other types of transistors. Its metal-oxide-semiconductor construction provides high-voltage and power handling capability, which makes it well-suited for applications requiring high-voltage and power handling capability. In addition, its gate voltage control allows it to precisely control the current passing through it, making it ideal for applications requiring precision power management and control.
The IXTQ220N075T is also relatively easy to use in electronics projects. It is available in a number of packages, including surface mount and through-hole, and its gate voltage control makes it easy to use in a variety of applications. In addition, its rugged construction makes it well-suited for use in a variety of environments, such as those exposed to extreme temperatures.
Disadvantages
The main disadvantage of the IXTQ220N075T is its relatively high cost. In addition, because of its metal-oxide-semiconductor construction, it is susceptible to interference from electromagnetic fields. This makes it unsuitable for some applications, such as those requiring low noise levels or those operating in high-noise environments.
In addition, because it is a single gate device, it does not provide the same level of control as other types of transistors, such as the dual-gate MOSFETs. This can limit its use in certain applications, such as those requiring multiple stage switching.
Conclusion
The IXTQ220N075T is a high-power, single gate MOSFET device designed to switch electrical current. It is well-suited for applications requiring high-voltage and power handling capability and is relatively easy to use in electronics projects. Its main disadvantages are its relatively high cost and susceptibility to interference from electromagnetic fields. While it can provide precise control in certain applications, it is not suitable for applications requiring multiple stage switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXTQ102N15T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 150V 102A TO-... |
IXTQ36N30P | IXYS | -- | 28 | MOSFET N-CH 300V 36A TO-3... |
IXTQ22N50P | IXYS | -- | 60 | MOSFET N-CH 500V 22A TO-3... |
IXTQ180N10T | IXYS | 3.46 $ | 47 | MOSFET N-CH 100V 180A TO-... |
IXTQ460P2 | IXYS | -- | 70 | MOSFET N-CH 500V 24A TO3P... |
IXTQ44P15T | IXYS | 4.31 $ | 30 | MOSFET P-CH 150V 44A TO-3... |
IXTQ26N50P | IXYS | -- | 78 | MOSFET N-CH 500V 26A TO-3... |
IXTQ200N10T | IXYS | -- | 36 | MOSFET N-CH 100V 200A TO-... |
IXTQ36N50P | IXYS | -- | 27 | MOSFET N-CH 500V 36A TO-3... |
IXTQ88N30P | IXYS | -- | 63 | MOSFET N-CH 300V 88A TO-3... |
IXTQ10P50P | IXYS | 4.53 $ | 30 | MOSFET P-CH 500V 10A TO-3... |
IXTQ80N28T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 280V 80A TO-3... |
IXTQ152N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 152A TO-3... |
IXTQ160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-3... |
IXTQ160N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 160A TO-3... |
IXTQ180N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 180A TO-3... |
IXTQ180N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 180A TO-3... |
IXTQ182N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 182A TO-3... |
IXTQ200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-3... |
IXTQ200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-3... |
IXTQ220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-3... |
IXTQ220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-3... |
IXTQ230N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 230A TO-3... |
IXTQ240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-3... |
IXTQ250N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 250A TO-3... |
IXTQ280N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 280A TO-3... |
IXTQ450P2 | IXYS | 3.04 $ | 60 | MOSFET N-CH 500V 16A TO3P... |
IXTQ60N20L2 | IXYS | 10.35 $ | 58 | MOSFET N-CH 200V 60A TO-3... |
IXTQ40N50L2 | IXYS | 10.35 $ | 30 | MOSFET N-CH 500V 40A TO-3... |
IXTQ52N30P | IXYS | -- | 138 | MOSFET N-CH 300V 52A TO-3... |
IXTQ36P15P | IXYS | 4.53 $ | 104 | MOSFET P-CH 150V 36A TO-3... |
IXTQ130N10T | IXYS | -- | 131 | MOSFET N-CH 100V 130A TO-... |
IXTQ40N50Q | IXYS | 9.5 $ | 1000 | MOSFET N-CH 500V 40A TO-3... |
IXTQ52P10P | IXYS | 4.53 $ | 3434 | MOSFET P-CH 100V 52A TO-3... |
IXTQ36N20T | IXYS | 1.87 $ | 1000 | MOSFET N-CH 200V TO-3PN-C... |
IXTQ56N15T | IXYS | 1.87 $ | 1000 | MOSFET N-CH 150V 56A TO-3... |
IXTQ28N15P | IXYS | 1.9 $ | 1000 | MOSFET N-CH TO-3PN-Channe... |
IXTQ48N20T | IXYS | 2.14 $ | 1000 | MOSFET N-CH 200V 48A TO-3... |
IXTQ16N50P | IXYS | -- | 1000 | MOSFET N-CH 500V 16A TO-3... |
IXTQ14N60P | IXYS | 2.34 $ | 1000 | MOSFET N-CH 600V 14A TO-3... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
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