Allicdata Part #: | IXTQ62N15P-ND |
Manufacturer Part#: |
IXTQ62N15P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 62A TO-3P |
More Detail: | N-Channel 150V 62A (Tc) 350W (Tc) Through Hole TO-... |
DataSheet: | IXTQ62N15P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 350W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 31A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 62A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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:IXTQ62N15P is a high-voltage MOSFET transistor manufactured by Infineon Technologies. It is a low-cost, low-on-state and low-noise semiconductor device with superior features. The IXTQ62N15P device has the negative alphar coefficient, low gate charge, low RDS(ON) which is the on-state resistance, improve the device for low-frequency switching applications and operates over a wide range of drain-to-source voltage (VDSS) to 700V with a gate-to-source voltage (VGSS) of ±20V.
The IXTQ62N15P application field can range from medical implants, automotive applications, laptop or PC machines, consumer electronics, telecom, power supply and industrial electronics. Generally, it is often used in a number of motor drive applications such as high-voltage gate drivers, mixed-signal motors, rotating machines, transformers and so on. According to its superior features, the IXTQ62N15P can also be used in power tools, consumer equipment, electro-mechanical actuators and small appliances.
The working principle of the IXTQ62N15P can be summarized as below. There are two distinct components inside the device: a Metal–Oxide – Semiconductor Field-Effect Transistor structure and an insulated-gate structure. When power is applied, the insulated-gate structure generates an electric field near the drain terminal, the electrons then flow from the drain terminal to the source. At the same time, a voltage applied between the gate terminal and the drain terminal creates an electric field, which determines how many electrons can flow through the channel. This controlled channel is known as a MOSFET, and it is the active element in the IXTQ62N15P.
When the voltage applied to the gate terminal increases, the amount of electrons flowing through the channel increases. As the drain-to-source resistance increases, the power dissipated by IXTQ62N15P is reduced which, in turn, reduces the heat generated by the device. As the gate-to-source voltage decreases, the conduction resistance decreases and the amount of electrons flowing through the channel decreases. By adjusting the voltage applied to the gate terminal, the current flowing through the device can be precisely controlled.
IXTQ62N15P are ideal for switching applications where both low power dissipation and low on-state resistance are required. They are also suitable for use in applications that require low temperature performance, such as high-speed computers, power tools and other high voltage applications.The IXTQ62N15P can also be used in applications such as motor drivers, electronic starters and in control circuits for stepper motors or DC motors.
In summary, IXTQ62N15P is a high-voltage MOSFET transistor with superior features, wide range of applications, and working principle. It is an ideal choice for applications such as motor drivers, electronic starters and in control circuits for stepper motors or DC motors. It is also suitable for applications that require low on-state resistance and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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