IXTQ36P15P Allicdata Electronics
Allicdata Part #:

IXTQ36P15P-ND

Manufacturer Part#:

IXTQ36P15P

Price: $ 4.53
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 150V 36A TO-3P
More Detail: P-Channel 150V 36A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXTQ36P15P datasheetIXTQ36P15P Datasheet/PDF
Quantity: 104
1 +: $ 4.12020
30 +: $ 3.30918
120 +: $ 3.01502
510 +: $ 2.44142
1020 +: $ 2.05903
Stock 104Can Ship Immediately
$ 4.53
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: PolarP™
Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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IXTQ36P15P is a type of enhancement-mode marginal field effect transistor (MOSFET) which is equipped with N-channel and qualitative drain current, Id. This MOSFET device is designed for use in a variety of applications where power switches, low drain-source on-state resistance and good switching performance are required. It is used as a switch to regulate voltage, current and power with minimal power loss. The IXTQ36P15P is capable of handling continuous drain currents up to 15A and features a low RDS(ON) of 20 mΩ.

When analyzing the working principle of the IXTQ36P15P, it is helpful to view it from two points: the electronic mechanism of the device and the behavior it is trying to achieve. The electronic mechanism of the device is based on the operation of an N-channel MOSFET. The electrical principles involved in the device are those of electrical field controlling the development of the channel between the source and drain regions, which then regulates the amount of current flowing from source to drain.

The behavior that the IXTQ36P15P is trying to achieve is that of a power switch, where the device is turned on and off with minimal power loss. When turned on, the device acts as an open switch with no decrease in drain current, acting as an efficient way to regulate voltage, current and power with minimal power loss. When turned off, the device acts as a closed switch, preventing any current from passing through. The IXTQ36P15P achieves this behavior by acting as a voltage-controlled resistance: the higher the turn-on voltage, VGS, that is applied to the gate terminal, the lower the voltage and power dissipation across the channel.

The IXTQ36P15P is used for a variety of applications including load switching, power steering, high-side current sensing, load dump protection and voltage regulation. It is especially suited for applications where low RDS(ON) and low power loss are critical or when a low source-drain capacitance is needed. By taking advantage of its low voltage-drop, superior RDS(ON) and low on-resistance, the IXTQ36P15P is an ideal choice for power switching applications.

In summary, the IXTQ36P15P MOSFET is a type of enhancement-mode marginal field effect transistor which features a low RDS(ON) of 20 mΩ and the ability to handle continuous drain currents up to 15A. It works as an electronically-controlled resistance, turning on and off with minimal power loss and is used for various applications such as load switching and voltage regulation. By leveraging its low on-resistance and superior switching performance, the IXTQ36P15P provides an enhanced level of power switch performance and is well suited for applications where low power loss and efficient load regulation are critical.

The specific data is subject to PDF, and the above content is for reference

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