Allicdata Part #: | IXTQ150N15P-ND |
Manufacturer Part#: |
IXTQ150N15P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 150A TO-3P |
More Detail: | N-Channel 150V 150A (Tc) 714W (Tc) Through Hole TO... |
DataSheet: | IXTQ150N15P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 714W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTQ150N15P is a field effect transistor (FET) that is single in nature. It is an enhancement-mode, N-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) and is rated for a maximum current of 15A. IXTQ150N15P provides excellent performance with an on-state resistance (Rdson) of 0.50m³ at 10V. It offers a low threshold voltage and fast switching capabilities. As such, it is an ideal device for use in power supply designs and power management applications.
The IXTQ150N15P uses a source gate, drain source, and drain body configuration and contains a gate oxide layer that acts as a capacitor between the gate and the source. This gate oxide layer is then covered by a gate electrode which is negatively charged and controls the electric field between the source and the drain. When a voltage is applied to the gate electrode, this electric field affects the free carriers in the channel and their diffusion through the oxide layer. This effectively controls the current flow between the source and drain and the IXTQ150N15P provides enhanced performance with its high transconductance feature. In addition, the current flowing through the source and drain can be regulated by adjusting the operating voltage at the gate.
The IXTQ150N15P also has a wide range of applications, including motor control, light dimming and illumination, as well as active and power electronic audio equipment. The FET is also ideal for use in general-purpose, automotive and switching power supply applications. It has a high-speed switching capability that allows it to efficiently control power systems. It is also compatible with TTL, CMOS and ECL inputs, and can be configured to operate with a wide range of output voltages and currents.
The IXTQ150N15P is capable of operating in temperatures ranging from -55°C to 175°C and is also highly reliable as it features a high-quality thermal resistance. The FET is available in a TO-220AB package and comes with a Pb-free lead finish ensuring a long service life. The IXTQ150N15P is supplied with device markings and the manufacturer\'s logo etched into the top surface.
Overall, IXTQ150N15P is a single N-channel FET that is ideal for use in motor control, light dimming and illumination, as well as active and switching power supply applications. The device is highly efficient and offers excellent performance with a low on-state resistance, high transconductance and fast switching capabilities. It is also highly reliable and comes with a high-quality thermal resistance and a long service life.
The specific data is subject to PDF, and the above content is for reference
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