Allicdata Part #: | IXTQ170N10P-ND |
Manufacturer Part#: |
IXTQ170N10P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 170A TO-3P |
More Detail: | N-Channel 100V 170A (Tc) 715W (Tc) Through Hole TO... |
DataSheet: | IXTQ170N10P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 715W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 198nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 170A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTQ170N10P is a popular N-Channel Enhanced Mode MOSFET (E-Mode MOSFET). This type of technology offers low gate charge, high current, low capacitance, and fast switching for applications requiring very high power efficiency and good power density. It is also ideal for applications that require a low-noise voltage regulator or low-impedance power converter.
The IXTQ170N10P is mainly used in DC-DC converters, voltage regulator modules, class D audio amplifiers, and many other types of power electronics applications. This device has an on-state resistance (RDSon) of about 0.4 ohm, an under-voltage lockout voltage of 0.7V, and a positive temperature coefficient which increases junction-to-case thermal resistance. This device is also rated to handle a continuous drain current of up to 170A, a pulsed drain current of up to 345A, making it particularly suitable for pulsed and high-current applications.
The IXTQ170N10P has a simple working principle. When a positive gate voltage is applied to the device, electrons in the substrate are attracted to the drain region, creating a conductive channel between the source and drain. This allows current to flow between the source and drain, and the device is considered to be in the “on” state. When the gate voltage is set to zero, the electrons in the substrate are repelled from the drain region, and no channel is present. This puts the device into the “off” state, where current cannot flow between the source and drain.
The IXTQ170N10P is capable of delivering extremely high power for its size, making it ideal for a wide variety of power applications. Its simple working principle makes it very easy to use, and the device can be easily integrated into any system.
In conclusion, the IXTQ170N10P is a versatile N-channel MOSFET that is suitable for many applications which require high power, high current, and low-voltage operation. Its on-state resistance is low, making it suitable for low-impedance power converters, and its temperature coefficient ensures reliable operation in a wide range of power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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