IXTQ170N10P Allicdata Electronics
Allicdata Part #:

IXTQ170N10P-ND

Manufacturer Part#:

IXTQ170N10P

Price: $ 5.53
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 170A TO-3P
More Detail: N-Channel 100V 170A (Tc) 715W (Tc) Through Hole TO...
DataSheet: IXTQ170N10P datasheetIXTQ170N10P Datasheet/PDF
Quantity: 1000
1 +: $ 5.53000
10 +: $ 5.36410
100 +: $ 5.25350
1000 +: $ 5.14290
10000 +: $ 4.97700
Stock 1000Can Ship Immediately
$ 5.53
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 715W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
Series: Polar™
Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTQ170N10P is a popular N-Channel Enhanced Mode MOSFET (E-Mode MOSFET). This type of technology offers low gate charge, high current, low capacitance, and fast switching for applications requiring very high power efficiency and good power density. It is also ideal for applications that require a low-noise voltage regulator or low-impedance power converter.

The IXTQ170N10P is mainly used in DC-DC converters, voltage regulator modules, class D audio amplifiers, and many other types of power electronics applications. This device has an on-state resistance (RDSon) of about 0.4 ohm, an under-voltage lockout voltage of 0.7V, and a positive temperature coefficient which increases junction-to-case thermal resistance. This device is also rated to handle a continuous drain current of up to 170A, a pulsed drain current of up to 345A, making it particularly suitable for pulsed and high-current applications.

The IXTQ170N10P has a simple working principle. When a positive gate voltage is applied to the device, electrons in the substrate are attracted to the drain region, creating a conductive channel between the source and drain. This allows current to flow between the source and drain, and the device is considered to be in the “on” state. When the gate voltage is set to zero, the electrons in the substrate are repelled from the drain region, and no channel is present. This puts the device into the “off” state, where current cannot flow between the source and drain.

The IXTQ170N10P is capable of delivering extremely high power for its size, making it ideal for a wide variety of power applications. Its simple working principle makes it very easy to use, and the device can be easily integrated into any system.

In conclusion, the IXTQ170N10P is a versatile N-channel MOSFET that is suitable for many applications which require high power, high current, and low-voltage operation. Its on-state resistance is low, making it suitable for low-impedance power converters, and its temperature coefficient ensures reliable operation in a wide range of power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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