| Allicdata Part #: | IXTQ74N20P-ND |
| Manufacturer Part#: |
IXTQ74N20P |
| Price: | $ 3.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 74A TO-3P |
| More Detail: | N-Channel 200V 74A (Tc) 480W (Tc) Through Hole TO-... |
| DataSheet: |  IXTQ74N20P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 3.40000 |
| 10 +: | $ 3.29800 |
| 100 +: | $ 3.23000 |
| 1000 +: | $ 3.16200 |
| 10000 +: | $ 3.06000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 480W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
| Series: | PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 34 mOhm @ 37A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 74A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTQ74N20P is a single insulated-gate field-effect transistor (IGFET), which is a type of field-effect transistor (FET) that works by using an electrically insulating layer between the gate and the conducting channel to control the carriers flowing between the source and drain terminals. It is manufactured using the latest process technology, with an optimized layout tailored for reliable operation and performance. The IXTQ74N20P offers an efficient and cost-effective solution for medium-power applications.
The IXTQ74N20P is an N-channel enhancement mode FET that uses a gate-controlled p-type silicon channel between its source and drain. This type of FET is used widely in a broad range of applications from telecommunications and automotive to industrial and consumer electronics. The device uses the latest vertical N-channel MOSFET, IXTQ74N20P process technology for improved performance, electromagnetic interference (EMI) immunity, higher switching speeds, better on-resistance, low leakage current, and improved EMI performance.
When this FET is turned off, there is no connection between the source and drain, so no current flows. When the gate voltage is driven to a positive voltage, the channel will form, allowing current to flow from the drain to the source. The amount of current that can flow from the drain to the source is dependent on the magnitude of the applied voltage to the gate. By varying the voltage to the gate, the amount of current flowing through the channel can be varied, allowing for electronic control of the device.
The IXTQ74N20P is suitable for a broad range of applications. It can be used for digital logic and power devices, motors, switching relays, and a range of other high-power applications. It is also ideal for digital signal processing applications that require high speeds, while still maintaining a high level of robustness. It is an ideal solution for applications where clean, fast, and reliable switching is required. The device is also designed to be EMI immune, ensuring stringent EMI requirements are met.
The IXTQ74N20P device is very reliable, offering excellent on-resistance and leakage current performance. It has a maximum dissipation of 600 milliwatts, which makes it ideal for providing good performance in medium-power applications. The device also has a very low on-state resistance, making it a great choice for higher power levels. The device is also available in a wide range of package sizes, making it suitable for a variety of applications.
Overall, the IXTQ74N20P is a reliable, cost-effective, and efficient solution for medium-power applications. It can be used for digital logic and power devices, switching relays, and a range of other applications which require clean and reliable switching. The device is capable of providing excellent EMI immunity and high switching speeds, while still providing a high level of robustness. Its low on-state resistance and maximum dissipation makes it ideal for medium-power applications.
The specific data is subject to PDF, and the above content is for reference
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